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290 篇相关论文 (2008–2026)

ISSCC 2023 Session 22 Other
A 28nm 2D/3D Unified Sparse Convolution Accelerator with Block-Wise Neighbor Searcher for Large-Scaled Voxel-Based Point Cloud Network
Wenyu Sun1, Xiaoyu Feng1, Chen Tang1, Shupei Fan1, Yixiong Yang1,
important role in many emerging applications such as autonomous driving, visual navigation and virtual reality. Recent research shows that adopting 3D voxel-based sparse convolution (SCONV) as a backbone can achieve bett
ISSCC 2023 Session 22 Other
A 12.4TOPS/W @ 136GOPS AI-IoT System-on-Chip with 16
RISC-V, 2-to-8b Precision-Scalable DNN Acceleration and, 30%-Boost Adaptive Body Biasing
Francesco Conti1, Davide Rossi1, Gianna Paulin2, Angelo Garofalo1, Alfio Di Mauro2, Georg Rutishauer2, Gianmarco Ottavi1, Manuel Eggimann2, Hayate Okuhara1, Vincent Huard3, Olivier Montfort3, Lionel Jure3, Nils Exibard3,
ISSCC 2023 Session 21 Other
ASIL-D Compliant Battery Monitoring IC with High Measurement Accuracy and Robust Communication
Jong-Kyoung Lee1,2, Sunsik Woo2, Wooyoung Jeong2, Kwang-Seok Oh2,
Donghyeon Kim2, Youngwoon Ko2, Jin-Yong Jeon2, Jooho Lee2, Young-Suk Son2, Sang-Gug Lee1, Kyeongha Kwon1 Korea Advanced Institute of Science and Technology, Daejeon, Korea Autosilicon, Daejeon, Korea 1 2 Electric vehicle
ISSCC 2023 Session 21 Other
An LTE-Harvesting BLE-to-WiFi Backscattering Chip for Single-Device RFID-Like Interrogation
Shih-Kai Kuo*, Manideep Dunna*, Hongyu Lu, Akshit Agarwal,
Dinesh Bharadia, Patrick P. Mercier University of California, San Diego, CA *Equally Credited Authors (ECAs) Recent work in backscatter modulation has enabled very low-power communication between an IoT tag and commodity
ISSCC 2023 Session 21 Other
A 263GHz 32-Channel EPR-on-a-Chip Injection-Locked VCO-Array
Anh Chu*1, Michal Kern*1, Khubaib Khan1, Klaus Lips2, Jens Anders1,3
Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin, Germany 3 Institute for Microelectronics Stuttgart (IMS CHIPS), Stuttgart, Germany *Equally Credited Authors (ECAs) 1 2 Electron paramagnetic resonance (EPR)
ISSCC 2023 Session 21 Other
A CMOS Multi-Functional Biosensor Array for Rapid LowConcentration Analyte Detection with On-Chip DEP-Assisted Active Enrichment and Manipulation with No External Electrodes
Dongwon Lee1, Doohwan Jung2, Fuze Jiang1, Gregory Villiam Junek3,
Diego, CA 1 3 Electronic biosensors are transducers that convert biomolecular or cellular information to electronic readouts. Though advances in electronics keep improving biosensors’ performance, often their ultimate de
ISSCC 2023 Session 21 Other
A 22µW Peak Power Multimodal Electrochemical Sensor Interface IC for Bioreactor Monitoring
Qiuyang Lin1, Wim Sijbers1, Christina Avdikou1, Didac Gomez1,2,
The Netherlands 1 2 Bioreactors are employed in many industries like food, beverage, chemical, and biopharmaceutical to grow biologically active compounds. Bioreactors range in size from large industrial tanks for manufa
ISSCC 2023 Session 21 Other
A 65nm CMOS Living-Cell Dynamic Fluorescence Sensor with 1.05fA Sensitivity at 600/700nm Wavelengths
Fatemeh Aghlmand1, Chelsea Hu1,2, Saransh Sharma1, Krishna K. Pochana1,
Richard M. Murray1, Azita Emami1 California Institute of Technology, Pasadena, CA Texas A&M University, College Station, TX 1 2 Integrated, low-cost and miniaturized devices that can detect clinically relevant biomarkers
ISSCC 2023 Session 19 Other
A Small-Satellite-Mounted 256-Element Ka-Band CMOS Phased-Array Transmitter Achieving 63.8dBm EIRP Under 26.6W Power Consumption Using Single/Dual Circular Polarization Active Coupler
Dongwon You , Xi Fu , Xiaolin Wang , Yuan Gao , Wenqian Wang ,
Jun Sakamaki1, Hans Herdian1, Sena Kato1, Michihiro Ide1, Yuncheng Zhang1, Ashbir Aviat Fadila1, Zheng Li1, Chun Wang1, Yun Wang1, Jumpei Sudo2, Makoto Higaki2, Nahoka Kawaguchi2, Masaya Nitta2, Soichiro Inoue2, Takashi
ISSCC 2023 Session 19 Other
A 2.95mW/element Ka-band CMOS Phased-Array Receiver Utilizing On-Chip Distributed Radiation Sensors in Low-Earth-Orbit Small Satellite Constellation
Xi Fu1, Dongwon You1, Xiaolin Wang1, Michihiro Ide1, Yuncheng Zhang1,
Jun Sakamaki1, Ashibir Aviat Fadila1, Zheng Li1, Yun Wang1, Jumpei Sudo2, Makoto Higaki2, Soichiro Inoue2, Takashi Eishima2, Takashi Tomura1, Jian Pang1, Hiroyuki Sakai1, Kenichi Okada1, Atsushi Shirane1 Tokyo Institute
ISSCC 2023 Session 19 Other
An Interferer-Tolerant Harmonic-Resilient Receiver with >+10dBm 3rd-Harmonic Blocker P1dB for 5G NR Applications
Soroush Araei, Shahabeddin Mohin, Negar Reiskarimian
The sub-6GHz spectrum is heavily utilized by 5G New Radio (NR), as well as traditional cellular and WiFi technologies. A major challenge in designing SAW-less wideband radio receivers (especially targeting the sub-2GHz r
ISSCC 2023 Session 13 Other
A Silicon Photonic Reconfigurable Optical Analog Processor (SiROAP) with a 4x4 Optical Mesh
Md Jubayer Shawon, Vishal Saxena
As we envision post-Moore solid-state circuits, there is a growing impetus for leveraging emerging device technologies outside the traditional CMOS fold. Silicon photonics (SiP) fabrication in CMOS-compatible foundries h
ISSCC 2023 Session 13 Other
Subtractive Photonic Waveguide-Coupled Photodetectors in 180nm Bulk CMOS
Craig Ives, Ali Hajimiri
The integration of electronics and photonics into a single silicon CMOS process can serve wide-ranging applications, e.g. complex imaging and projection photonic systems, onchip optical interconnects, or self-correcting
ISSCC 2023 Session 13 Other
A Self-Programming PUF Harvesting the High-Energy Plasma During Fabrication
Kotaro Naruse, Takayuki Ueda, Jun Shiomi, Yoshihiro Midoh, Noriyuki Miura
Ambient energy harvesting exploits existing energy for powering ICs and has been expanding operation space and application field of IC electronics. If an existing high energy source yet unexploited by ICs could be found,
ISSCC 2023 Session 13 Other
A Triturated Sensing System
Noriyuki Miura1, Kotaro Naruse1, Jun Shiomi1, Yoshihiro Midoh1,
evolution of our information society today, where compact high-performance computers exist everywhere to provide us easy and immediate access to powerful information technologies and services. To further advance our info
ISSCC 2023 Session 13 Other
A 47nW Mixed-Signal Voice Activity Detector (VAD) Featuring
a Non-Volatile Capacitor-ROM, a Short-Time CNN Feature, Extractor and an RNN Classifier
Jinhai Lin1, Ka-Fai Un1, Wei-Han Yu1, Pui-In Mak1, Rui P. Martins1,2 University of Macau, Macau, China Instituto Superior Tecnico/University of Lisboa, Lisbon, Portugal 1 2 Real-time speech recognizers and translators re
ISSCC 2022 Session 32 Other
A Multimode 157µW 4-Channel 80dBA-SNDR Speech-Recognition Frontend with Self-DOA Correction Adaptive Beamformer
Taewook Kang*1, Seungjong Lee*1, Seungheun Song1,
Mohammad R. Haghighat2, Michael P. Flynn1 *Equally-Credited Authors (ECAs) 1 University of Michigan, Ann Arbor, MI; 2Intel, Santa Clara, CA Beamforming with multiple microphones is essential for Automatic Speech Recognit
ISSCC 2022 Session 32 Other
An Electronically Tunable Multi-Frequency Air-Coupled CMUT Receiver Array with sub-100µPa Minimum Detectable Pressure Achieving a 28kb/s Wireless Uplink Across a Water-Air Interface
Ajay Singhvi, Aidan Fitzpatrick, Amin Arbabian
Oceans play a critical role in our ecosystem – they regulate weather and global temperature, serve as the largest carbon sink and the greatest source of oxygen. Maintaining ocean health is of paramount importance and has
ISSCC 2022 Session 32 Other
A 1.2mW/channel 100µm-Pitch-Matched Transceiver ASIC with Boxcar-Integration-Based RX Micro-Beamformer for High-Resolution 3D Ultrasound Imaging
Peng Guo1, Fabian Fool1, Emile Noothout1, Zu-Yao Chang1, Hendrik J. Vos1,2,
Johan G. Bosch2, Martin D. Verweij1,2, Nico de Jong1,2, Michiel A. P. Pertijs1 Delft University of Technology, Delft, The Netherlands 2 Erasmus MC, Rotterdam, The Netherlands 1 The integration of 2D ultrasonic transducer
ISSCC 2022 Session 32 Other
A Pitch-Matched ASIC with Integrated 65V TX and Shared Hybrid Beamforming ADC for Catheter-Based High-FrameRate 3D Ultrasound Probes
Yannick Hopf1, Boudewine Ossenkoppele1, Mehdi Soozande2, Emile Noothout1,
Zu-Yao Chang1, Chao Chen1, Hendrik Vos1,2, Hans Bosch2, Martin Verweij1,2, Nico de Jong1,2, Michiel Pertijs1 Delft University of Technology, Delft, The Netherlands Erasmus MC, Rotterdam, The Netherlands 1 2 Intra-cardiac
ISSCC 2022 Session 32 Other
BatDrone: A 9.83M-focal-points/s 7.76µs-Latency Ultrasound Imaging System with On-Chip Per-Voxel RX Beamfocusing for 7m-Range Drone Applications
Liuhao#Wu*1, Jiaqi#Guo*1, Rucheng#Jiang1, Yande#Peng2, Han#Wu1, Jiamin#Li1,
Yilong#Dong1, Miaolin#Zhang1, Zhuoyue#Li1, Kian#Ann#Ng3, Chne-Wuen#Tsai1, Lian#Zhang1, Longyang#Lin4, Liwei#Lin2, Jerald#Yoo1,5 National University of Singapore, Singapore, Singapore University of California, Berkeley, C
ISSCC 2022 Session 31 Other
A -91dB THD+N Resistor-Less Class-D Piezoelectric Speaker Driver Using a Dual Voltage/ Current Feedback for LC Resonance Damping
Shoubhik Karmakar1, Marco Berkhout2, Kofi A. A. Makinwa1, Qinwen Fan1
Goodix Technology, Nijmegen, The Netherlands 1 2 Piezoelectric speakers are gaining popularity on account of their improving form-factor and audio quality, making them a good fit for many audio applications such as in te
ISSCC 2022 Session 31 Other
A 121dB DR, 0.0017% THD+N, 8× Jitter-Effect Reduction Digital-Input Class-D Audio Amplifier with Supply-VoltageScaling Volume Control and Series-Connected DSM
Wei-Hao Sun, Shih-Hsiung Chien, Tai-Haur Kuo
Class-D audio amplifiers have gradually become standard components in mobile devices, where better audio quality over a wide volume range and higher output power (POUT) are desired. However, in mobile devices, the POUT i
ISSCC 2022 Session 31 Other
A -117dBc THD (-132dBc HD3) and 126dB DR Audio Decoder with Code-Change-Insensitive RT-DEM Algorithm and Circuit Technique for Relaxing Velocity Saturation Effect of Poly Resistors
Shon-Hang Wen, Chuan-Hung Hsiao, Shih-Hsiung Chien, Ya-Chi Chen,
inter-symbol interference (ISI) [1,2]; 2) 3rd-order harmonic distortion (HD3) due to the 2nd-order nonlinearity of poly resistors; and 3) Cross-over distortion (COD) arising from limited amplifier inner-loop gain due to
ISSCC 2022 Session 29 Other
184QPS/W 64Mb/mm2 3D Logic-to-DRAM Hybrid Bonding with Process-Near-Memory Engine for Recommendation System
Dimin Niu1, Shuangchen Li1, Yuhao Wang1, Wei Han1, Zhe Zhang2, Yijin Guan2,
Tianchan Guan3, Fei Sun1, Fei Xue1, Lide Duan1, Yuanwei Fang1, Hongzhong Zheng1, Xiping Jiang4, Song Wang4, Fengguo Zuo4, Yubing Wang4, Bing Yu4, Qiwei Ren4, Yuan Xie1 Alibaba DAMO Academy, Sunnyvale, CA; 2Alibaba DAMO A
ISSCC 2019 Session 12 Other
Micro Short-Circuit Detector Including S/H Circuit for 1hr Retention and 52dB Comparator Composed of C-Axis Aligned Crystalline IGZO FETs for Li-Ion Battery Protection IC
Hiroki Inoue1, Takeshi Aoki1, Fumika Akasawa1, Toshiki Hamada1,
Toshihiko Takeuchi1, Kousei Nei1, Takako Seki1, Yuto Yakubo1, Kei Takahashi1, Shuji Fukai1, Takahiko Ishizu1, Munehiro Kozuma1, Ryota Tajima1, Takanori Matsuzaki1, Takayuki Ikeda1, Makoto Ikeda2, Shunpei Yamazaki1 Semico
ISSCC 2019 Session 12 Other
An FPGA-Accelerated Fully Nonvolatile Microcontroller Unit for Sensor-Node Applications in 40nm CMOS/MTJHybrid Technology Achieving 47.14μW Operation at 200MHz
Masanori Natsui1, Daisuke Suzuki1, Akira Tamakoshi1,
Toshinari Watanabe1,2, Hiroaki Honjo1,2, Hiroki Koike1,2, Takashi Nasuno1,2, Yitao Ma1, Takaho Tanigawa1,2, Yasuo Noguchi1,2, Mitsuo Yasuhira1,2, Hideo Sato1, Shoji Ikeda1,2, Hideo Ohno1, Tetsuo Endoh1,2, Takahiro Hanyu1
ISSCC 2018 Session 30 Other
A 20ns-Write 45ns-Read and 1014-Cycle Endurance Memory Module Composed of 60nm Crystalline Oxide Semiconductor Transistors
Shuhei Maeda1, Satoru Ohshita1, Kazuma Furutani1, Yuto Yakubo1,
Takahiko Ishizu1, Tomoaki Atsumi1, Yoshinori Ando1, Daisuke Matsubayashi1, Kiyoshi Kato1, Takashi Okuda1, Masahiro Fujita2, Shunpei Yamazaki1 Semiconductor Energy Laboratory, Atsugi, Japan 2 University of Tokyo, Tokyo, J
ISSCC 2018 Session 30 Other
A 28nm 32Kb Embedded 2T2MTJ STT-MRAM Macro with 1.3ns Read-Access Time for Fast and Reliable Read Applications
Tzu-Hsien Yang1,2, Kai-Xiang Li1, Yen-Ning Chiang1, Wei-Yu Lin1,
nonvolatile memory (NVM) with a fast read-access time (TAC) and reliable read operations: for applications including data-logging, configurable look-up tables (LUT), eFuse, and physically unclonable functions (PUF). STT-
ISSCC 2018 Session 30 Other
A 1Mb 28nm STT-MRAM with 2.8ns Read Access Time at 1.2V VDD Using Single-Cap Offset-Cancelled Sense Amplifier and In-situ Self-Write-Termination
Qing Dong1,2, Zhehong Wang1, Jongyup Lim1, Yiqun Zhang1,
spin-transfer-torque (STT) MRAM is a promising candidate for nextgeneration high-density embedded non-volatile memory [1-2]. However, 1T1R STT-MRAM suffers from limited sensing margin and high write power. As shown in Fi
ISSCC 2018 Session 30 Other
An N40 256K×44 Embedded RRAM Macro with SL-Precharge SA and Low-Voltage Current Limiter to Improve Read and Write Performance
Chung-Cheng Chou, Zheng-Jun Lin, Pei-Ling Tseng, Chih-Feng Li,
due to the simplicity of the RRAM element (RE) and its compatibility with a logic process. A RRAM bit cell (Fig. 30.1.1) consists of an NMOS select transistor and a bipolar RE, which consists of a bottom electrode (BE),
ISSCC 2018 Session 24 Other
A 3-to-40V VIN 10-to-50MHz 12W Isolated GaN Driver with Self-Excited tdead Minimizer Achieving
0.2ns/0.3ns tdead, 7.9% Minimum Duty Ratio and, 50V/ns CMTI
Xugang Ke, D. Brian Ma University of Texas at Dallas, Richardson, TX High-frequency (fSW), wide-input (VIN) power converters have gained increasing popularity in automotive applications due to the heightening demand for
ISSCC 2018 Session 24 Other
A Fully Integrated Three-Level 11.6nC Gate Driver Supporting GaN Gate Injection Transistors
Achim Seidel1, Bernhard Wicht1,2
Leibniz University Hannover, Hannover, Germany 1 2 Due to their superior fast-switching performance, GaN transistors show enormous potential to enable compact power electronics in applications like renewable energy, elec
ISSCC 2018 Session 24 Other
A 2MHz 150-to-400V Input Isolated DC-DC Bus Converter with Monolithic Slope-Sensing ZVS Detection Achieving 13ns Turn-On Delay and 1.6W Power Saving
Lin Cong1,2, Hoi Lee1
Texas Instruments, Santa Clara, CA 1 2 The growing development of industrial power supplies demands DC-DC converters that are increasingly efficient and reliable. Industrial bus supplies that operate from a front-end PFC
ISSCC 2018 Session 23 Other
A 7.4-to-14GHz PLL with 54fsrms Jitter in 16nm FinFET for Integrated RF-Data-Converter SoCs
Didem Turker1, Ade Bekele1, Parag Upadhyaya1, Bob Verbruggen2,
Ying Cao1, Shaojun Ma1, Christophe Erdmann2, Brendan Farley2, Yohan Frans1, Ken Chang1 Xilinx, San Jose, CA; 2Xilinx, Dublin, Ireland 1 Direct-RF data converters [1,2] have seen increased adoption in remote-radiohead TX
ISSCC 2018 Session 23 Other
A Quad-Core 15GHz BiCMOS VCO with -124dBc/Hz
Phase Noise at 1MHz Offset, -189dBc/Hz FOM, and, Robust to Multimode Concurrent Oscillations
Fabio Padovan1, Fabio Quadrelli1,2, Matteo Bassi1, Marc Tiebout1, Andrea Bevilacqua2 Infineon Technologies, Villach, Austria University of Padova, Padova, Italy 1 2 The relentless development of next-generation communica
ISSCC 2018 Session 23 Other
An Inverse-Class-F CMOS VCO with Intrinsic-High-Q 1st- and 2nd-Harmonic Resonances for 1/f2-to-1/f3 Phase-Noise Suppression Achieving 196.2dBc/Hz FOM
Chee-Cheow Lim1,2, Jun Yin1, Pui-In Mak1, Harikrishnan Ramiah2,
Rui P. Martins1,3 University of Macau, Macau, China University of Malaya, Kuala Lumpur, Malaysia 3 Instituto Superior Tecnico/University of Lisboa, Lisbon, Portugal 1 2 Second-harmonic common-mode (CM) resonance has been
ISSCC 2018 Session 23 Other
A 301.7-to-331.8GHz Source with Entirely On-Chip Feedback Loop for Frequency Stabilization in 0.13μm BiCMOS
Chen Jiang1,2, Mohammed Aseeri3, Andreia Cathelin4, Ehsan Afshari1
King Abdulaziz City for Science and Technology, Riyadh, Saudi Arabia, 4 STMicroelectronics, Crolles, France 1 3 The THz band has shown its unique characteristics and great potential in many applications. Harmonic oscilla
ISSCC 2018 Session 23 Other
A 22.8-to-43.2GHz Tuning-Less Injection-Locked Frequency Tripler Using Injection-Current Boosting with 76.4% Locking Range for Multiband 5G Applications
Jingzhi Zhang, Huihua Liu, Chenxi Zhao, Kai Kang
Future cross-network and international roaming are attractive in mm-wave fifthgeneration (5G) wireless networks with multiband operations. The generation of an ultra-wide-bandwidth ultra-low-phase-noise (PN) local oscill
ISSCC 2018 Session 23 Other
A -31dBc Integrated-Phase-Noise 29GHz Fractional-N Frequency Synthesizer Supporting Multiple Frequency Bands for Backward-Compatible 5G Using a Frequency Doubler and Injection-Locked Frequency Multipliers
Heein Yoon1, Juyeop Kim1, Suneui Park1, Younghyun Lim1,
high-bandwidth mobile communications, 5G technology is targeted to support data-rates up to 10Gb/s. To reach this goal, one of challenging tasks for wireless transceivers is to generate millimeter-wave (mmW) band LO sign
ISSCC 2018 Session 21 Other
An 8-Channel 13GHz ESR-on-a-Chip Injection-locked VCO-array achieving 200μM-Concentration Sensitivity
Anh Chu1,3, Benedikt Schlecker1,3, Klaus Lips2, Maurits Ortmanns1,
University of Stuttgart, Stuttgart, Germany 1 2 Thanks to their unmatched specificity, methods based on magnetic resonance effects are amongst the most powerful spectroscopic techniques available today. Out of these meth
ISSCC 2018 Session 21 Other
A 286F2/Cell Distributed Bulk-Current Sensor and Secure Flush Code Eraser Against Laser Fault Injection Attack
Kohei Matsuda1, Tatsuya Fujii2, Natsu Shoji2, Takeshi Sugawara2,
and Technology, Ikoma, Japan 1 2 A sense-and-react closed-loop countermeasure is proposed against Laser Fault Injection (LFI) attack on a cryptographic processor core. A 286F2/cell distributed bulk-current sensor detects
ISSCC 2018 Session 21 Other
A 10Gb/s Si-Photonic Transceiver with 150μW 120μs-Lock-Time Digitally Supervised Analog Microring Wavelength Stabilization for 1Tb/s/mm2 Die-to-Die Optical Networks
Yvain Thonnart1, Mounir Zid1, José Luis Gonzalez-Jimenez1,
Guillaume Waltener1, Robert Polster1, Olivier Dubray1, Florent Lepin1, Stéphane Bernabé1, Sylvie Menezo1, Gabriel Parès1, Olivier Castany1, Laura Boutafa1, Philippe Grosse1, Benoît Charbonnier1, Charles Baudot2 CEA-LETI-
ISSCC 2018 Session 21 Other
32GHz Resonant-Fin Transistors in 14nm FinFET Technology
Bichoy Bahr1, Yanbo He2, Zoran Krivokapic3, Srinivasa Banna3, Dana Weinstein2
of microelectromechanical resonators in IC technology has been explored extensively over the past few decades in the effort to achieve onchip clocks, RF filters, and physical, chemical, and biological sensors. Various ap
ISSCC 2018 Session 21 Other
Mixed-Signal Programmable Non-Linear Interface for Resource-Efficient Multi-Sensor Analytics
Komail Badami, Juan-Carlos Pena Ramos, Steven Lauwereins, Marian Verhelst
many portable always-awake and multi-sensor systems, the power consumption is dominated by digital backend processing [1] for feature-computation and classification. Recent Analog-to-Information based innovations (see Fi
ISSCC 2017 Session 25 Other
A 500Mb/s 200pJ/b Die-to-Die Bidirectional Link with 24kV Surge Isolation and 50kV/μs CMR using Resonant Inductive Coupling in 0.18μm CMOS
Subhashish Mukherjee1, Anoop Narayan Bhat1,
Kumar Anurag Shrivastava1, Madhulatha Bonu1, Benjamin Sutton2, Venugopal Gopinathan1, Ganesan Thiagarajan1, Abhijit Patki1, Jhankar Malakar1, Nagendra Krishnapura3 Texas Instruments, Bangalore, India Texas Instruments, D
ISSCC 2017 Session 25 Other
A 1.3A Gate Driver for GaN with Fully Integrated Gate Charge Buffer Capacitor Delivering 11nC Enabled by High-Voltage Energy Storing
Achim Seidel, Bernhard Wicht
The MN1 control and supply circuit (Fig. 25.3.2 bottom) turns on MN1 via MN2, controlled by level shifter LS. D2 prevents discharging of the MN2 gate capacitance, when node GMN1 rises. D3 ensures 5V-over-voltage protecti
ISSCC 2017 Session 25 Other
A 10MHz 3-to-40V VIN Tri-Slope Gate Driving GaN DC-DC Converter with 40.5dBμV Spurious Noise Compression and 79.3% Ringing Suppression for Automotive Applications
Xugang Ke1, Joseph Sankman1,2, Yingping Chen1, Lenian He3, D. Brian Ma1
applications, DC-DC converters are widely employed [1]. However, size and thermal limits have made it challenging to continue using standard CMOS-based converters. Gallium Nitride (GaN) FETs, on the other hand, have a mu
ISSCC 2017 Session 25 Other
A 50.7% Peak Efficiency Subharmonic Resonant Isolated Capacitive Power Transfer System with 62mW Output Power for Low-Power Industrial Sensor Interfaces
Lei Chen1, Joseph Sankman1,2, Rajarshi Mukhopadhyay2, Mark Morgan2, D. Brian Ma1
industrial system reliability in hostile environments. They are exposed to destructive surge voltages, which are caused by ground current spikes from operation transitions of machinery and motor drives, endangering circu
ISSCC 2017 Session 15 Other
An Integrated Optical Physically Unclonable Function Using Process-Sensitive Sub-Wavelength Photonic Crystals in 65nm CMOS power meter to characterize the incident power, while the other half of the laser light shines uniformly on the chip under test. This setup is used to characterize the spectral responsivity of the photonic crystal, but is not required to generate responses for the PUF signature. The photonic structure itself serves as a linear polarizer that rejects incoming light in other polarization.
Xuyang Lu, Lingyu Hong, Kaushik Sengupta
Physical unclonable function (PUF) is regarded as an emerging solution for reliable cryptography. Rather than storing secret keys in memories, the information of a PUF is extracted through amplification of the physically