技术领域

mm-Wave

138 篇相关论文 (2008–2026)

ISSCC 2010 Session 23 mm-Wave
A 53-to-68GHz 18dBm Power Amplifier with an 8-Way Combiner in Standard 65nm CMOS
Baudouin Martineau1, Vincent Knopik2, Alexandre Siligaris3,
been demonstrated to satisfy the market demand for high data rates and frequency bandwidths [1-6]. However, 60GHz products need an improvement in power performance as well as transistor reliability for large signal opera
ISSCC 2010 Session 23 mm-Wave
A High-Gain 60GHz Power Amplifier with 20dBm Output Power in 90nm CMOS
Chi Y Law, Anh-Vu Pham
input matching network of the second stage is matched with 50Ω to minimize loss while the output matching network is designed to deliver maximum output power using power contours which were determined by load-pull simula
ISSCC 2010 Session 23 mm-Wave
A 1V 17.9dBm 60GHz Power Amplifier in Standard 65nm CMOS
Jie-Wei Lai1, Alberto Valdes-Garcia2, 1
J. Watson, Yorktown Heights, NY 2 For point-to-point multi-Gb/s applications in mobile devices with single antennas, low-cost, highly integrated solutions are preferred, and CMOS technology is a candidate for mm-Wave SoC
ISSCC 2010 Session 23 mm-Wave
A 13.1% Tuning Range 115GHz Frequency Generator Based on an Injection-Locked Frequency Doubler in 65nm CMOS
Andrea Mazzanti1, Enrico Monaco1,2, Massimo Pozzoni3,
University of Modena and Reggio Emilia, Modena, Italy Istituto Universitario di Studi Superiori, Pavia, Italy 3 STMicroelectronics, Pavia, Italy 4 University of Pavia, Pavia, Italy 2 Ultra-scaled CMOS devices offer the p
ISSCC 2010 Session 23 mm-Wave
A 90GHz-Carrier 30GHz-Bandwidth Hybrid Switching Transmitter with Integrated Antenna
Amin Arbabian1, Bagher Afshar1, Jun-Chau Chien1, Shinwon Kang1,
STMicroelectronics, Crolles, France 2 There is considerable interest in wideband pulse modulation at mm-Wave frequencies for application in radar and medical imaging systems [1,2]. Accuracy and resolution in these respec
ISSCC 2010 Session 23 mm-Wave
A W-Band 65nm CMOS Transmitter Front-End with 8GHz IF Bandwidth and 20dB IR-Ratio
Dan Sandström, Mikko Varonen, Mikko Kärkkäinen, Kari A. I. Halonen
The nanoscale era of CMOS technology has enabled the integration of mm-Wave circuits and front-ends at W-band [1,2]. The possible applications range from telecommunications (71 to 76 & 81 to 86GHz) and collision avoidanc
ISSCC 2010 Session 23 mm-Wave
A SiGe Quadrature Transmitter and Receiver Chipset for Emerging High-Frequency Applications at 160GHz
Ullrich R Pfeiffer, Erik Öjefors, Yan Zhao
A chipset for emerging high-frequency applications at 158 to 165GHz is presented. The two chips (RX and TX) are implemented in a European (DotFive) SiGe BiCMOS technology with fT=260GHz and fMAX=380GHz [1]. Envisioned ap
ISSCC 2010 Session 23 mm-Wave
A Millimeter-Wave Intra-Connect Solution
Kenichi Kawasaki1, Yoshiyuki Akiyama1, Kenji Komori1, Masahiro Uno1,
Hidenori Takeuchi1, Tomoari Itagaki1, Yasufumi Hino1, Yoshinobu Kawasaki1, Katsuhisa Ito1, Ali Hajimiri2 Sony, Tokyo, Japan, California Institute of Technology, Pasadena, CA Figure 23.1.4 shows the measured injection loc
ISSCC 2010 Session 11 mm-Wave
A 0.92/5.3nJ/b UWB Impulse Radio SoC for Communication and Localization
Y. J. Zheng1, S-X. Diao1, C-W. Ang1, Y. Gao1, F-C. Choong1, Z. Chen1,
X. Liu1, Y-S. Wang1, X-J. Yuan1, C. H. Heng2 1 Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore 2 National University of Singapore, Singapore UWB has shown great potential fo
ISSCC 2010 Session 11 mm-Wave
A Fully Integrated 802.15.4a IR-UWB Transceiver in 0.13µm CMOS with Digital RRC Synthesis
Sanghoon Joo1, Wu-Hsin Chen1, Tae-Young Choi1, Mi-Kyung Oh2,
15.4a low-rate WPAN standard adopts Impulse-Radio UWB (IR-UWB) to provide a low-power communication system with improved communication range, robustness, and mobility. Furthermore its standardized low-cost and high-accur
ISSCC 2010 Session 11 mm-Wave
An Ultra-Low-Power Interference-Robust IR-UWB Transceiver Chipset Using Self-Synchronizing OOK Modulation
Marco Crepaldi1,2, Chen Li1,3, Keith Dronson1, Jorge Fernandes1,4, Peter Kinget1
Columbia University, New York, NY Politecnico di Torino, Torino, Italy 3 Peking University, Beijing, China 4 Instituto Superior Tecnico, Lisbon, Portugal 2 Impulse Radio-UWB (IR-UWB) is actively being researched as a low
ISSCC 2010 Session 11 mm-Wave
A 2.4GHz 830pJ/bit Duty-Cycled Wake-Up Receiver with -82dBm Sensitivity for Crystal-Less Wireless Sensor Nodes
Salvatore Drago1,2, Domine M. W, Leenaerts1, Fabio Sebastiano1,3,
Lucien J. Breems1, Kofi A. A. Makinwa3, Bram Nauta2 1 NXP Semiconductors, Eindhoven, Netherlands University of Twente, Enschede, Netherlands 3 Delft University of Technology, Delft, Netherlands 2 This paper describes a 2
ISSCC 2010 Session 11 mm-Wave
A 2.4GHz/915MHz 51µW Wake-Up Receiver with Offset and Noise Suppression
Xiongchuan Huang, Simonetta Rampu, Xiaoyan Wang,
sensor networks (WSN), an always-on wake-up receiver (WuRx) can be used to monitor the radio link continuously. For truly autonomous sensor nodes employing energy scavenging, only 50µW power is available for the WuRx [1]
ISSCC 2010 Session 11 mm-Wave
A Wideband mm-Wave CMOS Receiver for Gb/s Communications Employing Interstage Coupled Resonators
Federico Vecchi1,2, Stefano Bozzola1, Massimo Pozzoni3,
Superiori di Pavia, Pavia, Italy 3 STMicroelectronics, Pavia, Italy 4 STMicroelectronics, now with Broadcom, Bunnik, Netherlands 5 University of Modena e Reggio Emilia, Modena, Italy 2 Multi-Gb/s wireless communications,
ISSCC 2010 Session 11 mm-Wave
A SiGe BiCMOS 16-Element Phased-Array Transmitter for 60GHz Communications gy. A stand-alone single-element breakout has a measured 60GHz OP1dB that can vary from +3dBm to +15dBm with a nearly constant peak PAE of 9%.
Alberto Valdes-Garcia1, Sean Nicolson2, Jie-Wei Lai3, Arun Natarajan1,
Ping-Yu Chen3, Scott Reynolds1, Jing-Hong Conan Zhan3, Brian Floyd1 The Tx has been fully characterized on-wafer. The output power from an individual element is measured, for CW input, for different phase (and correspond
ISSCC 2010 Session 11 mm-Wave
A Fully Integrated 77GHz FMCW Radar System in 65nm CMOS
Yi-An Li, Meng-Hsiung Hung, Shih-Jou Huang, Jri Lee
Millimeter-wave anti-collision radars have been widely investigated in advanced CMOS technologies recently. This paper presents a fully integrated 77GHz FMCW radar system in 65nm CMOS. The FMCW radar transmits a continuo
ISSCC 2010 Session 11 mm-Wave
A 4-Channel 4-Beam 24-to-26GHz Spatio-Temporal RAKE Radar Transceiver in 90nm CMOS for Vehicular Radar Applications
Harish Krishnaswamy1, Hossein Hashemi2, 1
is a future environment that is adaptive and responsive to the objects and human beings that occupy it. Wideband RF and mm-Wave radar and imaging sensors will play a key role for indoor and outdoor surveillance, search a
ISSCC 2009 Session 29 mm-Wave
A 59GHz Push-Push VCO with 13.9GHz Tuning Range Using Loop-Ground Transmission Line for a FullBand 60GHz Transceiver
Takahiro Nakamura, Toru Masuda, Katsuyoshi Washio, Hiroshi Kondoh
60GHz wireless communication systems, using the unlicensed frequency band from 57 to 66GHz, are expected to make high-data-rate transfer possible. IEEE 802.15.3c is finalizing a radio-frequency (RF) allocation composed o
ISSCC 2009 Session 29 mm-Wave
A 57-to-66GHz Quadrature PLL in 45nm Digital CMOS
K. Scheir1,2, G. Vandersteen2, Y. Rolain2, P. Wambacq1,2, 1
for high-data-rate communication. Despite the large amount of research on CMOS mm-wave frequency generation, current state-of-the-art mm-wave PLLs [1-5] do not achieve a tuning range that is wide enough to cover the worl
ISSCC 2009 Session 29 mm-Wave
A Digitally Controlled Compact 57-to-66GHz Front-End in 45nm Digital CMOS
Jonathan Borremans1, Kuba Raczkowski1,2, Piet Wambacq1,3, 1
high-datarate communication [1-4]. From a cost perspective, a highly integrated solution is favorable. Speed and power consumption considerations for the highdata-rate digital part of the chip make 45nm CMOS a very reali
ISSCC 2009 Session 29 mm-Wave
A Dual-Mode Architecture for a Phased-Array Receiver Based on Injection Locking in 0.13µm CMOS
Satwik Patnaik, Narasimha Lanka, Ramesh Harjani
Phased arrays have long been used by the military for radar applications, but have only been recently applied to consumer applications. In a phased array system, one or more narrow beams are generated by transmitting (or
ISSCC 2009 Session 29 mm-Wave
A 26dB-Gain 100GHz Constructive-Wave Amplifier Si/SiGe Cascaded
James F. Buckwalter, Joohwa Kim
The availability of W-band (75 to 111GHz) silicon integrated circuits will potentially revolutionize medical and security imaging, as well as high-capacity wireless communications. Traditional W-band circuits rely on GaA
ISSCC 2009 Session 29 mm-Wave
W-Band CMOS Amplifiers Achieving +10dBm Saturated Output Power and 7.5dB NF
Dan Sandström, Mikko Varonen, Mikko Kärkkäinen, Kari Halonen
The scaling of CMOS technology has led to development of amplifiers up to 100GHz and even beyond. As the technology enables the integration of many functions on silicon and is suitable for mass production, the cost-effec
ISSCC 2009 Session 29 mm-Wave
A 1.1V 150GHz Amplifier with 8dB Gain and +6dBm Saturated Output Power in Standard Digital 65nm CMOS Using Dummy-Prefilled Microstrip Lines
Munkyo Seo1, Basanth Jagannathan2, Corrado Carta1, John Pekarik3,
Luis Chen1, C. Patrick Yue1, Mark Rodwell1 University of California, Santa Barbara, CA IBM, Burlington, VT 3 IBM, Crolles, France 1 2 Radio applications beyond 100GHz that will benefit from silicon technologies [1-5] inc
ISSCC 2009 Session 16 mm-Wave
A 128.24-to-137.00GHz Injection-Locked Frequency Divider in 65nm CMOS
Bo-Yu Lin, Kun-Hung Tsai, Shen-Iuan Liu
Owing to the nanoscale CMOS technology, mm-wave circuits have been recently attracting a lot of attention for communication, sensing and imaging systems. Several mm-wave components with operation frequencies around or mo
ISSCC 2009 Session 16 mm-Wave
A mm-Wave CMOS Multimode Frequency Divider
Hsien-Ku Chen1, Hsien-Jui Chen2, Da-Chiang Chang3, Ying-Zong Juang3,
unlicensed mm-wave bands has fueled the research and development of mm-wave wireless systems. If different frequency bands can be operated from one signal source, it will reduce the circuit size and power consumption, le
ISSCC 2009 Session 16 mm-Wave
An Array of 4 Complementary LC-VCOs with 51.4% W-Band Coverage in 32nm SOI CMOS
inductor parameter is estimated and calibrated with EM simulations. The target tuning range is 85 to 105GHz, and 32nm SO
Daeik D. Kim1, Jonghae Kim2, Choongyeun Cho1, Jean-Olivier Plouchart3, Mahender Kumar1, Woo-Hyeong Lee1, Ken Rim1 The implemented VCOs tune from 83.20 to 96.98GHz (VCO1, 2, and 3) and 100.07 to 104.28GHz (VCO4), and thei
ISSCC 2009 Session 16 mm-Wave
A 43.7mW 96GHz PLL in 65nm CMOS
Kun-Hung Tsai, Shen-Iuan Liu
Advances in nanoscale CMOS technology have made it feasible to implement W-Band circuits in CMOS. Recently, CMOS implementation of high-frequency circuits for applications such as 77GHz anti-collision systems, 94GHz imag
ISSCC 2009 Session 16 mm-Wave
An 18Gb/s Duobinary Receiver with a CDR-Assisted DFE
Kazuhisa Sunaga, Hideyuki Sugita, Koichi Yamaguchi, Kazumasa Suzuki
As shown in Fig. 16.1.3, when the transmitter output patterns are especially toggle patterns (1010…), the received input data have intermediate voltages between VH and VL (or the slicer outputs (DH(T), DL(T)) consequentl
ISSCC 2008 Session 9 mm-Wave
A Broadband Distributed Amplifier with Internal Feedback Providing 660GHz GBW in 90nm CMOS
Amin Arbabian, Ali M. Niknejad
Wideband circuits find applications in various fields such as highspeed links, broadband radio transceivers, high-resolution radar and imaging systems. Recently, distributed amplifiers (DAs) with large bandwidths have be
ISSCC 2008 Session 9 mm-Wave
A 2kV ESD-Protected 18GHz LNA with 4dB NF in 0.13µm CMOS
Yiqun Cao1, Vadim Issakov2, Marc Tiebout3, 1
10GHz is becoming extremely crowded alternative higher frequency bands are getting a large attention despite their associated high dispersion losses and need for a direct line-of-sight. Recently, numerous published work
ISSCC 2008 Session 9 mm-Wave
A 22.3dB Voltage Gain 6.1dB NF 60GHz LNA in 65nm CMOS with Differential Output
Christopher Weyers, Pierre Mayr, Johannes W. Kunze, Ulrich Langmann
broadband high-data-rate wireless communication systems. Increasing digital signal processing in Gb/s communication systems using OFDM demands modern CMOS technologies with feature size of 65nm or less. It is desirable t
ISSCC 2008 Session 9 mm-Wave
A 60GHz CMOS Receiver Using a 30GHz LO
Ali Parsa, Behzad Razavi
Recent work on receivers for the 60GHz band has considered various frequency plans to ease the design of the building blocks, particularly the local oscillator (LO) and the frequency dividers [1-3]. A natural choice of t
ISSCC 2008 Session 9 mm-Wave
A Near-Field Modulation Technique Using Antenna Reflector Switching
Aydin Babakhani, David B. Rutledge, Ali Hajimiri
In typical radio transmitters, the signal is modulated at lower frequencies and then up-converted, amplified, and radiated by an antenna. In the absence of multi-path, receivers at different angles observe the same modul
ISSCC 2008 Session 9 mm-Wave
A Scalable 6-to-18GHz Concurrent Dual-Band QuadBeam Phased-Array Receiver in CMOS
Sanggeun Jeon, Yu-Jiu Wang, Hua Wang, Florian Bohn,
tremendous array gain, noise improvement, and beamforming capabilities for a variety of applications such as radar and communications. Such phased-array systems have traditionally been implemented using compound semicond
ISSCC 2008 Session 9 mm-Wave
A 52GHz Phased-Array Receiver Front-End in 90nm Digital CMOS
K. Scheir1,2, S. Bronckers1,2, J. Borremans1,2, P. Wambacq1,2, Y. Rolain2, 1
components at high frequencies impose the application of beamforming to enable wireless communication in the mm-wave band. At the receiver side, beamforming improves the SNR and increases immunity against interfering sig
ISSCC 2008 Session 9 mm-Wave
A Robust 24mW 60GHz Receiver in 90nm Standard CMOS
Bagher Afshar, Yanjie Wang, Ali M. Niknejad
Emerging applications for the 60GHz spectrum include extremely high-data-rate short-range communication systems. Many of these applications are expected to enter the realm of consumer electronics where low cost and mass
ISSCC 2008 Session 9 mm-Wave
A 95GHz Receiver with Fundamental-Frequency VCO and Static Frequency Divider in 65nm Digital CMOS
Ekaterina Laskin1, Mehdi Khanpour1, Ricardo Aroca1, Keith W. Tang1,
Patrice Garcia2, Sorin P. Voinigescu1 1 University of Toronto, Toronto, Canada, 2STMicroelectronics, Crolles, France Recently, several integrated radio receivers and transmitters operating at 60GHz have been developed in