mm-Wave

Lysander Lim, Ryan Lobo, Dave Welland, Chung-Kai Chow, Andrew Dornbusch, Tim Dupuis, Struan Vaz, Fred Rush, Paul Bassett, Hong Kim, Monier Maher, Otto Schmid, Curtis Davis, Manju Hegde Uhnder, Austin, TX MIMO radars tran

Weishow Hsu1, Jing-Hong Conan Zhan1, Brian Juan1, Chi-Hang Lok1, Sam Lee1, PC Hsiao1, Qiang Zhou2, Mark Wei1, Hsiang-Yun Chu1, Yu-Lun Chen1, Chao-Ching Hung1, Kevin Fong1, Po-Chun Huang1, Pierce Chen1, Sheng-Yuan Su1, Ya

Millimeter-wave full-duplex (FD) transceivers (TRXs) have the potential to unlock the full throughput of future 5G links. A major challenge in mm-wave FD TRXs is to suppress the wideband modulated self-interference (SI)

SiGe BiCMOS and CMOS processes continue to push the frontier on millimeter-wave (mm-wave) and highly integrated phased-array systems for a variety of communication applications [1,3]. Furthermore, next-generation mobile

This paper presents a hybrid beamforming mm-wave MIMO receiver with two key innovations. First, it can be configured into three modes: two single-band multistream modes at 28 or 37 GHz that can support single- or multi-u

G. Liu1, T. Segoria1, J. Lerdworatawee1, J. W. Park1, H-C. Park2, H. Hedayati3, D. Lu1, P. Monat1, K. Douglas1, V. Aparin1 Qualcomm, San Diego, CA now with Samsung Electronics, Suwon, Korea 3 now with Atlazo, San Diego,

Millimeter-wave massive MIMOs leverage large array size to enhance the link budget and spatial selectivity, but their resulting narrow beamwidth substantially complicates the transmitter-receiver (TX-RX) alignment. Unlik

Bagher Afshar, Michael Boers, Donghyup Shin, Timothy Mercer, Wei-Hong Chen, Anna Papio Toda, Alfred Grau Besoli, Seunghwan Yoon, Sissy Kyriazidou, Phil Yang, Vipin Aggarwal, Nooshin Vakilian, Dmitriy Rozenblit, Masoud Ka

Crolles, France 1 2 Terahertz imaging has been gaining increasing attention for its emerging applications in security, biomedical and material characterization. Previous works have demonstrated terahertz imagers on silic

Jet Propulsion Laboratory, Pasadena, CA 1 2 Silicon based mm-Wave radiometers for sensing, passive imaging, and even biomedical imaging have become an emerging area with many excellent systems demonstrated up to W-band [

The terahertz band (0.3 to 3.0THz) has been found to be spectroscopically rich with many substances possessing strong and unique absorption signatures useful for chemical and biomedical sensing applications [1-4]. Photon

sub-millimeter-wave frequency ranges are used in fast-scan rotational spectroscopy to detect gas molecules and measure their concentrations [1]. This technique can be used for indoor air quality monitoring, detection of

IHP, Frankfurt, Germany 1 2 Silicon technologies have already been employed in state-of-the-art THz imagers. However, their optical resolution was restricted to millimeters by the diffraction limit [1,2], and THz super-r

Signal generation at mm-Wave-to-THz frequencies is attractive because of its applications in bio-sensing, spectroscopy, detection of concealed weapons, as well as high-data-rate communication. CMOS is considered a potent

University of California, Davis, CA 1 2 The THz/sub-mm-Wave band is known to provide unique applications in spectroscopy, imaging and high-data-rate wireless communication. An accurate THz source is essential in coherent

There is an untapped market for integrated high-resolution imaging and spectroscopy at mm-Wave and THz frequencies. Some novel approaches have been recently proposed to render on-chip signal generation and transmission a

silicon-based THz video cameras have been demonstrated for industrial, surveillance, scientific, and medical applications in the THz range (300GHz to 3THz) [1]. Such camera implementations favor pixels with antennacouple

using PA arrays and by combining individual PA output powers either on chip with linear combiners or in free space with antenna arrays [1,2]. Therefore, the output power of a PA element can be compromised by the array si

Millimeter-Wave standards like IEEE 802.15.3c and the new 802.11ad have classifications of their PHY to support single-carrier mode and more complex OFDM mode (high-speed interface) with high peak-to-average ratio (PAPR)

Bertrand Parvais1, Wim Van Thillo1, André Bourdoux1, Charlotte Soens1, Jan Craninckx1, Piet Wambacq1,2 imec, Leuven, Belgium, Vrije Universiteit Brussel, Brussels, Belgium 1 2 Millimeter-Wave radar sensors perform accura

The 71-to-76GHz and 81-to-86GHz bands (known as E-band) exhibit low atmospheric attenuation and are allocated by FCC and CEPT for long-haul transmission. They enable multi-Gb/s fixed-link services such as fiber extension

Steven R. Dooley2, Jamin J McCue1, Pompei L. Orlando2, Gregory L. Creech2, Waleed Khalil1 Ohio State University, Columbus, OH, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 1 Figure 8.8.3 shows the sche

Wojceich Debski2, Stefan Beer3, Thomas Zwick3, Mekdes G. Girma4, Juergen Hasch4, Christoph J. Scheytt5 IHP, Frankfurt Oder, Germany, Silicon Radar, Frankfurt Oder, Germany, 3 Karlsruhe Institute of Technology, Karlsruhe,

Figure 8.6.4(a) depicts the 94GHz 7-bit phase shifter with two-step phase interpolation. The vector generator consists of a 90° coupler and 2 baluns, converting RF input into differential quadrature signals. The desired

silicon technologies have recently shown the capability of implementing W-band imaging receivers with an image resolution of 1.5mm and temperature resolutions of less than 0.5K [1-4]. This paper extends the capability of

North Carolina State University, Raleigh, NC 1 2 In this paper, we report a fully integrated power amplifier (PA) architecture that combines the power of 16 on-chip PAs using a 16-way zero-degree combiner to achieve an o

applications in health, security and industry. Recently, CMOS technology is used to implement these systems for applications such as imaging, high-speed communication and radar [1]. Signal amplification for the target TH

Terahertz spectroscopy using silicon technology is gaining attraction for future portable and affordable material identification equipment. To do this, a broadband THz radiation source is critical. Unfortunately, the ban

Institute of Technology, Beijing, China 1 3 The vastly under-utilized spectrum in the sub-THz frequency range enables disruptive applications including 10Gb/s chip-to-chip wireless communications and imaging/spectroscopy

Viki Szortyka1,2, Kristof Vaesen1, Wim Van Thillo1, Bertrand Parvais1, Mike Libois1, Steven Thijs1, John R. Long3, Charlotte Soens1, Piet Wambacq1,2 imec, Heverlee, Belgium Vrije Universiteit Brussel, Brussel, Belgium 3

Tong Wang, Yuta Tsubouchi, Ryoichi Tachibana, Akihide Sai, Yuka Kobayashi, Daisuke Kurose, Tomohiko Ito, Koichiro Ban, Tomoya Tandai, Takeshi Tomizawa Toshiba, Kawasaki, Japan High-speed and energy-efficient wireless com

Z. Xu3, Y. Wu4, M. Zhu1, Mau-Chung Frank Chang1 University of California, Los Angeles, Los Angeles, CA 2 University of Florida, Gainsville, FL 3 HRL, Malibu, CA 4 Northrop Grumman Aerospace Systems, Los Angeles, CA 1 Mil

Institute of Microelectronics, Singapore, Singapore 3 MicroArray Technologies, Chengdu, China 1 2 High-data-rate short-range communication and image systems beyond 100GHz impose crucial requirements on signal sources, de

For a highly integrated wireless system including on-chip antennas, high-outputpower power amplifiers (PA) are required to cover the desired transmission range. In order to achieve the output power level, power-combining

Sub-mm-Wave and terahertz frequencies have many applications such as medical imaging, spectroscopy and communication systems. CMOS signal generation at this frequency range is a major challenge due to the limited cut-off

Up until recently, the terahertz frequency range (0.3 to 3THz) has been mostly addressed by high-mobility custom III-V processes, bulky and expensive nonlinear optics, or cryogenically cooled quantum cascade lasers. A lo

sub-millimeter-wave imaging using solid-state circuits is gaining attention for security and medical applications. To lower cost and increase integration, MOSFETs in CMOS are being investigated for implementing broadband

Millimeter-Wave (MMW) phased-array receivers are used not only to overcome the large path loss and thus to relax the link budget but also to electrically steer the beam direction to suppress unwanted signals. Each elemen

shield surrounding each pixel. This layout symmetry enabled a wide-band radially symmetric antenna pattern. The silicon die (15Ω-cm resistivity) was thinned down to 150µm and active layers were selectively blocked to min

Taiwan 2 This paper presents a wireless non-contact sensor that enables detection, localization, and monitoring of people along with their specific features such as gait and cardiopulmonary activities. These types of sen

is one of the promising candidates for realizing a CMOS radar IC [1-3]. Range and velocity resolutions of the FMCW radar are determined by the bandwidth and period of triangular modulation [4]. A short-range measurement

This paper presents a 120GHz fully integrated 65nm low power (LP) CMOS transmitter that achieves data rates above 10Gb/s. At these high frequencies an extremely high bandwidth is available. This allows multi-gigabit-per-

Despite the aggressive scaling of silicon-based IC’s over the past few decades, the transistor characteristics have yet to improve so that the ‘THz’-range (~300GHz-to-3THz) circuits can be effectively designed using the

There is a growing interest in using CMOS technology in the mm-Wave and terahertz frequency ranges for applications such as spectroscopy, imaging, compact range radars, and remote sensing [1]. Tunable signal sources are

Some applications of wireless sensor networks (WSN) require long-term deployments and vanishingly-small unit volumes to make them cost effective and unobtrusive. Energy- and area-efficient circuits, as well as eliminatin

University of Pavia, Pavia, Italy, University of Modena e Reggio Emilia, Modena, Italy, 3 Istituto Universitario di Studi Superiori di Pavia, Pavia, Italy 2 With a cut-off frequency in excess of 250GHz, nanometer-scale C

University of Pavia, Pavia, Italy, 2 University of Modena e Reggio Emilia, Modena, Italy, 3 Istituto Universitario di Studi Superiori di Pavia, Pavia, Italy Wireless signal processing at mm-Waves would benefit from the a

Terahertz- and mm-Wave-based imagers have recently gained interest for imaging in security screening and bio-imaging applications [1,2]. For these applications to become practical, the core pixel circuits employed in an

2 NXP Semiconductors, Eindhoven, The Netherlands, NXP Semiconductors, San Diego, CA This work presents a 21.7-to-27.8GHz frequency synthesizer in a 45nm CMOS process that combines a tuning range of 24.8%, a residual phas

Terahertz (300GHz-to-3THz) imaging systems and radars are capable of providing high resolution images while still penetrating many materials [1]. Imaging receivers based on III-V Schottky diodes and waveguide technology