ISSCC 2010
Session 20
RF & Wireless
A 5-to-25Gb/s 1.6-to-3.8mW/(Gb/s) Reconfigurable Transceiver in 45nm CMOS
systems span a wide range: from 1-to-2mm on-package links (OPLs) in MCMs, to 25-to-100cm backplanes in server systems. Signaling with optimal power efficiency over such a diverse set of channels requires adaptation of th
ISSCC 2010
Session 20
RF & Wireless
A 32mW 7.4Gb/s Protocol-Agile Source-SeriesTerminated Transmitter in 45nm CMOS SOI
Teva Stone1, Barry Daly1 1 Rambus, Chapel Hill, NC, Rambus, Bangalore, India 2 Source-series-terminated (SST) transmitters consume ¼ the output stage power of CML drivers [1], but their adoption in industry-standard mult
ISSCC 2010
Session 20
RF & Wireless
A 12.3mW 12.5Gb/s Complete Transceiver in 65nm CMOS
power dissipation per Gb/s to less than 1mW/(Gb/s) (i.e., 1pJ/b) has been a long-held goal. Several years ago, the power dissipation of these links was in the range of about 10 to 20mW/(Gb/s). In 2007, Poulton et al. dev
ISSCC 2010
Session 20
RF & Wireless
A 78mW 11.8Gb/s Serial Link Transceiver with Adaptive RX Equalization and Baud-Rate CDR in 32nm CMOS
Doug Gambetta1, Sujatha Gowder1, Sitaraman Iyer1, Rohit Kumar1, Peter Kwok1, Renuka Krishnamurthy1, Chien-chun Lin1, Ravindran Mohanavelu1, Roan Nicholson1, Jeff Ou1, Marcus Pasquarella1, Kavitha Prasad1, Hendra Rustam1,
ISSCC 2010
Session 20
RF & Wireless
A 1.296-to-5.184Gb/s Transceiver with 2.4mW/(Gb/s) Burst-mode CDR using Dual-Edge Injection-Locked Oscillator
Yasunori Tsukuda1, Yuki Yagishita1, Hironobu Konishi2, Toshiyuki Ogata2, Hisashi Owa1, Taichi Niki1, Kenji Konda1, Masahiro Sato1, Hiroshi Shiroshita1, Takeshi Ogura1, Takayuki Aoki1, Hiroki Kihara1, Sachiya Tanaka1 1 So
ISSCC 2010
Session 20
RF & Wireless
An 8.5Gb/s CMOS OEIC with On-Chip Photodiode for Short-Distance Optical Communications
Yonsei University, Seoul, Korea Ewha Womans University, Seoul, Korea 2 Recently, low-cost silicon optoelectronic integrated circuits (OEICs) have been drawing attention for applications in short-distance optical communic
ISSCC 2010
Session 20
RF & Wireless
10Gb/s 15mW Optical Receiver with Integrated Germanium Photodetector and Hybrid Inductor Peaking in 0.13µm SOI CMOS Technology
Sherif Abdalla, Jeremy Witzens, Subal Sahni Luxtera, Carlsbad, CA As data networks scale to meet increasing bandwidth requirements, the shortcomings of copper channels are becoming more apparent. Dispersion, attenuation,
ISSCC 2010
Session 2
RF & Wireless
A 9.2µA Gen 2 Compatible UHF RFID Sensing Tag with -12dBm Sensitivity and 1.25µVrms InputReferred Noise Floor
Passive RFID technology enables battery-free wearable and implantable sensors with an unlimited lifespan, small size, and sub-gram weight. These properties facilitate advanced biomedical research (such as untethered moni
ISSCC 2010
Session 2
RF & Wireless
Suppression of Flicker Noise Upconversion in a 65nm CMOS VCO in the 3.0-to-3.6GHz Band
Flicker noise up-conversion into close-in 1/f3 phase noise is still one of the major issues in the design of CMOS oscillators. Suppression techniques have been recently presented suggesting (i) adoption of a resonant net
ISSCC 2010
Session 2
RF & Wireless
GHz DCO with a Frequency Resolution of 150Hz for All-Digital PLL
In all-digital phase-locked loops (ADPLLs), the quantization noise introduced by the frequency discretization in the digitally controlled oscillator (DCO) can affect the performance in terms of out-of-band phase noise. I
ISSCC 2010
Session 2
RF & Wireless
A 5.2-to-13GHz Class-AB CMOS Power Amplifier with a 25.2dBm Peak Output Power at 21.6% PAE
The ever-increasing demand for higher data rates in communication links has created a need for power amplifiers with large instantaneous bandwidth. Moreover, software-defined radio and smart antenna systems require power
ISSCC 2010
Session 2
RF & Wireless
A 60GHz-Band 2×2 Phased-Array Transmitter in 65nm CMOS
independent tuning of both vertical and horizontal polarizations realized in 65nm bulk CMOS is described in this paper. Phased-array transmitters increase the isotropic radiated power of a stand-alone transmitter over a
ISSCC 2010
Session 2
RF & Wireless
A Wideband Beamformer for a Phased-Array 60GHz Receiver in 40nm Digital CMOS
U. Leuven, Leuven, Belgium 3 Vrije Universiteit Brussel, Brussels, Belgium 2 For high-data-rate wireless communication in the 7GHz band around 60GHz, the IEEE 802.15.3c standard [1] provides channels with a 0.88GHz bandw
ISSCC 2010
Session 2
RF & Wireless
A True Time-Delay-Based Bandpass Multi-Beam Array at mm-Waves Supporting Instantaneously Wide Bandwidths
The phased array is a common technique where multiple spaced antennas electronically form and scan narrow electromagnetic beams to achieve spatial selectivity. These arrays are also referred to as steering arrays. On the
ISSCC 2009
Session 6
RF & Wireless
A 1.2V 67mW 4mm2 Mobile ISDB-T Tuner in 0.13µm CMOS
The widespread use of mobile TV applications has been anticipated in the past few years. In Japan ISDB-T mobile TV service was started in 2006 and within less than 2 years, mobile phones with TV function have become main
ISSCC 2009
Session 6
RF & Wireless
An Embedded 65nm CMOS Low-IF 48MHz-to-1GHz Dual Tuner for DOCSIS 3.0
L. Dauphinee, J. Xiao, D.S.-H. Chang, T.-H. Chih, M. Brandolini, D. Koh, B. J.-J. Hung, T. Wu, M. Introini, G. Cusmai, L. Tan, B. Currivan, L. He, P. Cangiane, P. Vorenkamp Broadcom, Irvine, CA The increased competition
ISSCC 2009
Session 6
RF & Wireless
A 45nm Low-Power SAW-less WCDMA Transmit Modulator Using Direct Quadrature Voltage Modulation
In FDD systems such as WCDMA and LTE, TX and RX operate simultaneously, while the duplexer provides the necessary isolation between them. In order not to desensitize the RX path, the TX noise in WCDMA band 1 has to be lo
ISSCC 2009
Session 6
RF & Wireless
Single-Chip RF CMOS UMTS/EGSM Transceiver with Integrated Receive Diversity and GPS
B. Ahrari2, R. Brockenbrough2, J. Chen2, C. Donovan2, R. Jonnalagedda2, J. Kim2, J. Ko2 , H. Lee2 , S. Lee2, E. Lei2, T. Nguyen2, T.Pan2, S. Sridhara1, W. Su1, H. Yan1, J. Yang2, C. Conroy2, C. Persico1, K. Sahota1, B. K
ISSCC 2009
Session 6
RF & Wireless
Single-Chip Multiband WCDMA/HSDPA/HSUPA/EGPRS Transceiver with Diversity Receiver and 3G DigRF Interface Without SAW Filters in Transmitter / 3G Receiver Paths
Mohamed El Said, John Vasa, Bala Ramachandran, Masoud Kahrizi, Elias Dagher, Wei-Hong Chen, Martin Vadkerti, Georgi Taskov, Utku Seckin, Hamid Firouzkouhi, Behzad Saeidi, Hasan Akyol, Yunyoung Choi, Amir Mahjoob, Sandeep
ISSCC 2009
Session 6
RF & Wireless
A SAW-Less Multiband WEDGE Receiver
Fabio T. Braz1, Richard Gudmundsson2, Thomas Mattsson2, Carine Lascaux1, Christophe Trichereau1, Wen Suter3, Eric Westesson2, Andreas Nydahl2 ST-NXP Wireless, Caen, France, 2Ericsson Mobile Platforms, Lund, Sweden Ericss
ISSCC 2009
Session 6
RF & Wireless
An Integrated Closed-Loop Polar Transmitter with Saturation Prevention and Low-IF Receiver for QuadBand GPRS/EDGE is then prevented by backing off the requested transmit power. Another signal from the PA, should it enter the saturation region, alters the slew rate of the recovery.
Thomas Obkircher1, Mohamed El Said1, Bala Ramachandran2, Tirdad Sowlati1, Darioush Agahi1, WeiHong Chen1, Dean A. Badillo1, Masoud Kahrizi1, Jaleh Komaili1, Stephane Wloczysiak1, Utku Seckin1, Yun-Young Choi1, Hasan Akyo
ISSCC 2009
Session 22
RF & Wireless
A Tunable Integrated Duplexer with 50dB Isolation in 40nm CMOS
frequency-selective filters for isolation. The stringent isolation requirements prohibit the integration of RF duplexers on silicon and particularly in CMOS technology. However, CMOS technology offers superior tuning and
ISSCC 2009
Session 22
RF & Wireless
A CMOS Adaptive Antenna-Impedance-Tuning IC Operating in the 850MHz-to-2GHz Band
Adaptive antenna-tuning units (AATUs) provide broadband dynamic tuning to widely-varying antenna impedances caused by the changes in operating frequencies and unpredictable environmental factors. AATUs are becoming a cri
ISSCC 2009
Session 22
RF & Wireless
50-to-67GHz ESD-Protected Power Amplifiers in Digital 45nm LP CMOS
shown that downscaled CMOS is a serious technology candidate to implement transceivers for high-data-rate wireless communication around 60GHz [1,2]. A low-cost implementation is the combination of the digital part with t
ISSCC 2009
Session 22
RF & Wireless
A 60GHz-Band 1V 11.5dBm Power Amplifier with 11% PAE in 65nm CMOS
output power in Fig. 22.4.3. The maximum saturated output power is 11.5dBm, with a peak PAE close to 11% at 9dBm output power. The measured small-signal gain is also slightly higher than given in Fig. 22.4.2 at 58GHz, as
ISSCC 2009
Session 22
RF & Wireless
A Single-Chip Highly Linear 2.4GHz 30dBm Power Amplifier in 90nm CMOS
Pankaj Goyal2, Yanjie Wang1, Ali M. Niknejad1 University of California, Berkeley, CA Intel, Hillsboro, OR In CMOS PAs, AM-PM distortion is also a major contributor to EVM. To reduce this, a PMOS-based capacitive compensa
ISSCC 2009
Session 22
RF & Wireless
An Octave-Range Watt-Level Fully Integrated CMOS Switching Power Mixer Array for Linearization and Back-Off Efficiency Improvement
Non-constant envelope modulation schemes have become commonplace in cellular applications due to their higher spectral efficiency. Linear PAs driven by an RF transmitter are usually used to generate these signals faithfu
ISSCC 2009
Session 22
RF & Wireless
A 0.13µm CMOS Power Amplifier with Ultra-Wide Instantaneous Bandwidth for Imaging Applications
The increased interest in Ultra-WideBand (UWB) impulse-based systems for high-resolution imaging applications [1] has created a demand for mediumpower linear amplifiers capable of transmitting such signals (FCC limits pe
ISSCC 2009
Session 12
RF & Wireless
A 400-to-900 MHz Receiver with Dual-domain Harmonic Rejection Exploiting Adaptive Interference Cancellation
Wideband direct-conversion harmonic-rejection (HR) receivers for softwaredefined radio aim to remove or relax the pre-mixer RF filters, which are inflexible, bulky and costly [1,2]. HR schemes derived from [3] are often
ISSCC 2009
Session 12
RF & Wireless
A Software-Defined Radio Receiver Architecture Robust to Out-of-Band Interference
In a software-defined radio (SDR) receiver it is desirable to minimize RF bandfiltering for flexibility, size and cost reasons, but this leads to increased outof-band interference (OBI). Besides harmonic and intermodulat
ISSCC 2009
Session 12
RF & Wireless
A 0.75V 325µW 40dB-SFDR Frequency-Hopping Synthesizer for Wireless Sensor Networks in 90nm CMOS
Frequency-Hopping Spread Spectrum (FHSS) for ultra-low-power Wireless Sensor Networks (WSNs) is the power dissipation of existing solutions. Whereas FHSS would make WSNs very robust and secure in difficult fading (indoor
ISSCC 2009
Session 12
RF & Wireless
A 4.75GHz Fractional Frequency Divider with Digital Spur Calibration in 45nm CMOS
transceivers. To offset the oscillator frequency from the PA output frequency, SSB mixing or division-by-2 is typically used [1]. However, the first might require additional filtering to remove mixing spurs and the latte
ISSCC 2009
Session 12
RF & Wireless
A 0.6V 380µW -14dBm LO-Input 2.4GHz DoubleBalanced Current-Reusing Single-Gate CMOS Mixer with Cyclic Passive Combiner
A mixer is one of the bottlenecks in achieving the low-voltage operation of a receiver. Most of the mixer topologies recently reported for low-voltage and low-power applications can be categorized into bulk-injection mix
ISSCC 2009
Session 12
RF & Wireless
A 0.2-to-2.0GHz 65nm CMOS Receiver Without LNA Achieving >11dBm IIP3 and <6.5 dB NF
Spurious-free dynamic range (SFDR) is a key specification of radio receivers and spectrum analyzers, characterizing the maximum distance between signal and noise+distortion. SFDR is limited by the linearity (intercept po
ISSCC 2009
Session 12
RF & Wireless
A Compact Low-Noise Amplifier in CMOS Weighted Distributed
The noise figure (NF) of a front-end low-noise amplifier (LNA) places a lower bound on the sensitivity of a receiver. In a conventional LNA, there is a tradeoff between the intrinsic input capacitance of the input transi
ISSCC 2009
Session 12
RF & Wireless
A 3.6mW Differential Common-Gate CMOS LNA with Positive-Negative Feedback
features superior bandwidth, linearity, stability, and robustness to PVT variations compared to a common-source (CS) topology [1]. In spite of these advantages, the dependence of gain and NF on the restricted transconduc
ISSCC 2009
Session 12
RF & Wireless
A Low-Noise Active Balun with IM2 Cancellation for Multiband Portable DVB-H Receivers
Broadband low noise amplifiers are needed in a variety of applications, from multistandard cellular receivers to terrestrial and handheld TV tuners [1,2]. For broadband and multiband operation, intermodulation and cross-
ISSCC 2008
Session 6
RF & Wireless
A 60kb/s-to-10Mb/s 0.37nJ/b Adaptive-FrequencyHopping Transceiver for Body-Area Network
and comsumer electronics applications, and its standardization is still in progress. The WPAN standards such as IEEE802.15.4 and 4a do not meet the WBAN requirements such as energy efficiency on the body, scalable QoS, a
ISSCC 2008
Session 6
RF & Wireless
A 90nm CMOS 60GHz Radio
in the past few years [1,2]. This paper discusses the integration of a 60GHz CMOS single-chip transmitter and a singlechip receiver using a standard 90nm CMOS technology demonstrating a reliable solution for 60GHz single
ISSCC 2008
Session 6
RF & Wireless
A 0.6-to-10GHz Receiver Front-End in 45nm CMOS
various standards including those for cellular, WLAN and WPAN applications. Software-defined radios (SDRs) are being considered as a likely platform to build tomorrow’s handsets. The receiver in such radios can be tuned
ISSCC 2008
Session 6
RF & Wireless
A 3-to-10GHz 14-Band CMOS Frequency Synthesizer with Spurs Reduction for MB-OFDM UWB System
As proposed by MB-OFDM alliance, the spectrum for UWB communication system ranges from 3.1-to-10.6GHz, which is divided into 14 bands, each of 528MHz bandwidth, and categorized into 5 groups [1]. To meet the stringent fr
ISSCC 2008
Session 6
RF & Wireless
UWB Fast-Hopping Frequency Generation Based on Sub-Harmonic Injection Locking
high-data-rate WiMedia UWB systems is to design an efficient LO generation. On one hand, it must fulfill the stringent requirements (multiple LO frequencies, spurious, settling time and I/Q imbalance), and on the other h
ISSCC 2008
Session 6
RF & Wireless
A Fully Integrated 14-Band 3.1-to-10.6GHz 0.13µm SiGe BiCMOS UWB RF Transceiver
Y. Jin, J. Marcincavage Alereon, Austin, TX UWB is an emerging wireless technology supporting data rates as high as 480Mb/s. The US allows the deployment of UWB systems in the frequency band from 3.1 to 10.6GHz, while ot
ISSCC 2008
Session 6
RF & Wireless
A CMOS UWB Camera with 7×7 Simultaneous Active Pixels
Ultra-wideband (UWB) imaging systems achieve high depth resolution. UWB timed arrays use a collection of spaced antennas to achieve azimuth selectivity as well [1]. The recent trend in realization of integrated beam-form
ISSCC 2008
Session 6
RF & Wireless
A 0.18µm CMOS 802.15.4a UWB Transceiver for Communication and Localization
15.4a has specified a UWB PHY for low-rate commutation with ranging capability for wireless personnel area and sensor network applications [1]. Related work is reported on low-rate energy-efficient UWB radios [2-4]. Howe
ISSCC 2008
Session 6
RF & Wireless
A 1.8Gpulses/s UWB Transmitter in 90nm CMOS
The potential of pulse-based ultra-wideband (UWB) technology has been demonstrated for high-data-rate short-distance wireless personal area networks (e.g., wireless USB) [1-3]. With the allocation of the spectrum from 3.
ISSCC 2008
Session 31
RF & Wireless
Balanced SiGe PA Module for Multi-Band and Multi-Mode Cellular-Phone Applications
STMicroelectronics, Catania, Italy Rapidly expanding market for multi-mode (MM) and multi-band (MB) cellular phones has recently fueled the demand for RF Power Amplifiers (PAs) that are able to operate with 2G, 2.5G and
ISSCC 2008
Session 31
RF & Wireless
A Fully Integrated Quad-Band GSM/GPRS CMOS Power Amplifier
G. Hatcher, D. McClymont, A. Hajimiri Axiom Microdevices, Irvine, CA There is a strong drive toward handheld communication devices with building blocks that are fully integrated in standard CMOS technologies. Although th
ISSCC 2008
Session 31
RF & Wireless
An Outphasing Power Amplifier for a SoftwareDefined Radio Transmitter
transmitter needs a universal modulator and power amplifier to support any modulation in any band. There is a simple solution, namely, a Cartesian I-Q upconverter followed by a linear power amplifier, but for complex mod
ISSCC 2008
Session 31
RF & Wireless
A 28.6dBm 65nm Class-E PA with Envelope Restoration by Pulse-Width and Pulse-Position Modulation
near-watt-level output power in nanometer CMOS is difficult to satisfy owing to the power supply voltage scaling with minimum feature size. High performance is problematic because most PA interfaces are defined by a 50Ω