技术领域

RF & Wireless

362 篇相关论文 (2008–2026)

ISSCC 2010 Session 20 RF & Wireless
A 5-to-25Gb/s 1.6-to-3.8mW/(Gb/s) Reconfigurable Transceiver in 45nm CMOS
Ganesh Balamurugan, Frank O’Mahony, Mozhgan Mansuri,
systems span a wide range: from 1-to-2mm on-package links (OPLs) in MCMs, to 25-to-100cm backplanes in server systems. Signaling with optimal power efficiency over such a diverse set of channels requires adaptation of th
ISSCC 2010 Session 20 RF & Wireless
A 32mW 7.4Gb/s Protocol-Agile Source-SeriesTerminated Transmitter in 45nm CMOS SOI
Wayne D Dettloff1, John C Eble1, Lei Luo1, Pravin Kumar2, Fred Heaton1,
Teva Stone1, Barry Daly1 1 Rambus, Chapel Hill, NC, Rambus, Bangalore, India 2 Source-series-terminated (SST) transmitters consume ¼ the output stage power of CML drivers [1], but their adoption in industry-standard mult
ISSCC 2010 Session 20 RF & Wireless
A 12.3mW 12.5Gb/s Complete Transceiver in 65nm CMOS
Koji Fukuda, Hiroki Yamashita, Goichi Ono, Ryo Nemoto, Eiichi Suzuki,
power dissipation per Gb/s to less than 1mW/(Gb/s) (i.e., 1pJ/b) has been a long-held goal. Several years ago, the power dissipation of these links was in the range of about 10 to 20mW/(Gb/s). In 2007, Poulton et al. dev
ISSCC 2010 Session 20 RF & Wireless
A 78mW 11.8Gb/s Serial Link Transceiver with Adaptive RX Equalization and Baud-Rate CDR in 32nm CMOS
Fulvio Spagna1, Lidong Chen1, Mamatha Deshpande1, Yongping Fan2,
Doug Gambetta1, Sujatha Gowder1, Sitaraman Iyer1, Rohit Kumar1, Peter Kwok1, Renuka Krishnamurthy1, Chien-chun Lin1, Ravindran Mohanavelu1, Roan Nicholson1, Jeff Ou1, Marcus Pasquarella1, Kavitha Prasad1, Hendra Rustam1,
ISSCC 2010 Session 20 RF & Wireless
A 1.296-to-5.184Gb/s Transceiver with 2.4mW/(Gb/s) Burst-mode CDR using Dual-Edge Injection-Locked Oscillator
Kenichi Maruko1, Tatsuya Sugioka1, Hiroaki Hayashi1, Zhiwei Zhou1,
Yasunori Tsukuda1, Yuki Yagishita1, Hironobu Konishi2, Toshiyuki Ogata2, Hisashi Owa1, Taichi Niki1, Kenji Konda1, Masahiro Sato1, Hiroshi Shiroshita1, Takeshi Ogura1, Takayuki Aoki1, Hiroki Kihara1, Sachiya Tanaka1 1 So
ISSCC 2010 Session 20 RF & Wireless
An 8.5Gb/s CMOS OEIC with On-Chip Photodiode for Short-Distance Optical Communications
Dongmyung Lee1, Jungwon Han2, Eunsoo Chang1, Gunhee Han1, Sung Min Park2
Yonsei University, Seoul, Korea Ewha Womans University, Seoul, Korea 2 Recently, low-cost silicon optoelectronic integrated circuits (OEICs) have been drawing attention for applications in short-distance optical communic
ISSCC 2010 Session 20 RF & Wireless
10Gb/s 15mW Optical Receiver with Integrated Germanium Photodetector and Hybrid Inductor Peaking in 0.13µm SOI CMOS Technology
Daniel Kucharski, Drew Guckenberger, Gianlorenzo Masini,
Sherif Abdalla, Jeremy Witzens, Subal Sahni Luxtera, Carlsbad, CA As data networks scale to meet increasing bandwidth requirements, the shortcomings of copper channels are becoming more apparent. Dispersion, attenuation,
ISSCC 2010 Session 2 RF & Wireless
A 9.2µA Gen 2 Compatible UHF RFID Sensing Tag with -12dBm Sensitivity and 1.25µVrms InputReferred Noise Floor
Daniel Yeager, Fan Zhang, Azin Zarrasvand, Brian P Otis
Passive RFID technology enables battery-free wearable and implantable sensors with an unlimited lifespan, small size, and sub-gram weight. These properties facilitate advanced biomedical research (such as untethered moni
ISSCC 2010 Session 2 RF & Wireless
Suppression of Flicker Noise Upconversion in a 65nm CMOS VCO in the 3.0-to-3.6GHz Band
Salvatore Levantino, Marco Zanuso, Carlo Samori, Andrea Lacaita
Flicker noise up-conversion into close-in 1/f3 phase noise is still one of the major issues in the design of CMOS oscillators. Suppression techniques have been recently presented suggesting (i) adoption of a resonant net
ISSCC 2010 Session 2 RF & Wireless
GHz DCO with a Frequency Resolution of 150Hz for All-Digital PLL
Luca Fanori, Antonio Liscidini, Rinaldo Castello
In all-digital phase-locked loops (ADPLLs), the quantization noise introduced by the frequency discretization in the digitally controlled oscillator (DCO) can affect the performance in terms of out-of-band phase noise. I
ISSCC 2010 Session 2 RF & Wireless
A 5.2-to-13GHz Class-AB CMOS Power Amplifier with a 25.2dBm Peak Output Power at 21.6% PAE
Hua Wang, Constantine Sideris, Ali Hajimiri
The ever-increasing demand for higher data rates in communication links has created a need for power amplifiers with large instantaneous bandwidth. Moreover, software-defined radio and smart antenna systems require power
ISSCC 2010 Session 2 RF & Wireless
A 60GHz-Band 2×2 Phased-Array Transmitter in 65nm CMOS
Wei L. Chan1, John R. Long1, Marco Spirito1, John J. Pekarik2, 1
independent tuning of both vertical and horizontal polarizations realized in 65nm bulk CMOS is described in this paper. Phased-array transmitters increase the isotropic radiated power of a stand-alone transmitter over a
ISSCC 2010 Session 2 RF & Wireless
A Wideband Beamformer for a Phased-Array 60GHz Receiver in 40nm Digital CMOS
The TIA has the same input stage as the current amplifier, but low output impedance by applying resistive shunt feedback
U. Leuven, Leuven, Belgium 3 Vrije Universiteit Brussel, Brussels, Belgium 2 For high-data-rate wireless communication in the 7GHz band around 60GHz, the IEEE 802.15.3c standard [1] provides channels with a 0.88GHz bandw
ISSCC 2010 Session 2 RF & Wireless
A True Time-Delay-Based Bandpass Multi-Beam Array at mm-Waves Supporting Instantaneously Wide Bandwidths
Ta-Shun Chu, Hossein Hashemi
The phased array is a common technique where multiple spaced antennas electronically form and scan narrow electromagnetic beams to achieve spatial selectivity. These arrays are also referred to as steering arrays. On the
ISSCC 2009 Session 6 RF & Wireless
A 1.2V 67mW 4mm2 Mobile ISDB-T Tuner in 0.13µm CMOS
Yi-Ti Huang, C. M. Yang, S. C. Huang, H. L. Pan, T. C. Hung
The widespread use of mobile TV applications has been anticipated in the past few years. In Japan ISDB-T mobile TV service was started in 2006 and within less than 2 years, mobile phones with TV function have become main
ISSCC 2009 Session 6 RF & Wireless
An Embedded 65nm CMOS Low-IF 48MHz-to-1GHz Dual Tuner for DOCSIS 3.0
F. Gatta, R. Gomez, Y. Shin, T. Hayashi, H. Zou, J.Y.C. Chang,
L. Dauphinee, J. Xiao, D.S.-H. Chang, T.-H. Chih, M. Brandolini, D. Koh, B. J.-J. Hung, T. Wu, M. Introini, G. Cusmai, L. Tan, B. Currivan, L. He, P. Cangiane, P. Vorenkamp Broadcom, Irvine, CA The increased competition
ISSCC 2009 Session 6 RF & Wireless
A 45nm Low-Power SAW-less WCDMA Transmit Modulator Using Direct Quadrature Voltage Modulation
Xin He, Jan van Sinderen
In FDD systems such as WCDMA and LTE, TX and RX operate simultaneously, while the duplexer provides the necessary isolation between them. In order not to desensitize the RX path, the TX noise in WCDMA band 1 has to be lo
ISSCC 2009 Session 6 RF & Wireless
Single-Chip RF CMOS UMTS/EGSM Transceiver with Integrated Receive Diversity and GPS
A. Hadjichristos1, M. Cassia1, H. Kim2, C.H. Park2, K. Wang1, W. Zhuo1,
B. Ahrari2, R. Brockenbrough2, J. Chen2, C. Donovan2, R. Jonnalagedda2, J. Kim2, J. Ko2 , H. Lee2 , S. Lee2, E. Lei2, T. Nguyen2, T.Pan2, S. Sridhara1, W. Su1, H. Yan1, J. Yang2, C. Conroy2, C. Persico1, K. Sahota1, B. K
ISSCC 2009 Session 6 RF & Wireless
Single-Chip Multiband WCDMA/HSDPA/HSUPA/EGPRS Transceiver with Diversity Receiver and 3G DigRF Interface Without SAW Filters in Transmitter / 3G Receiver Paths
Tirdad Sowlati, Bipul Agarwal, Joshua Cho, Thomas Obkircher,
Mohamed El Said, John Vasa, Bala Ramachandran, Masoud Kahrizi, Elias Dagher, Wei-Hong Chen, Martin Vadkerti, Georgi Taskov, Utku Seckin, Hamid Firouzkouhi, Behzad Saeidi, Hasan Akyol, Yunyoung Choi, Amir Mahjoob, Sandeep
ISSCC 2009 Session 6 RF & Wireless
A SAW-Less Multiband WEDGE Receiver
Olivier Gaborieau1, Sven Mattisson2, Nikolaus Klemmer3, Bassem Fahs1,
Fabio T. Braz1, Richard Gudmundsson2, Thomas Mattsson2, Carine Lascaux1, Christophe Trichereau1, Wen Suter3, Eric Westesson2, Andreas Nydahl2 ST-NXP Wireless, Caen, France, 2Ericsson Mobile Platforms, Lund, Sweden Ericss
ISSCC 2009 Session 6 RF & Wireless
An Integrated Closed-Loop Polar Transmitter with Saturation Prevention and Low-IF Receiver for QuadBand GPRS/EDGE is then prevented by backing off the requested transmit power. Another signal from the PA, should it enter the saturation region, alters the slew rate of the recovery.
Raja Pullela1, Shahrzad Tadjpour1, Dmitriy Rozenblit1, William Domino1,
Thomas Obkircher1, Mohamed El Said1, Bala Ramachandran2, Tirdad Sowlati1, Darioush Agahi1, WeiHong Chen1, Dean A. Badillo1, Masoud Kahrizi1, Jaleh Komaili1, Stephane Wloczysiak1, Utku Seckin1, Yun-Young Choi1, Hasan Akyo
ISSCC 2009 Session 22 RF & Wireless
A Tunable Integrated Duplexer with 50dB Isolation in 40nm CMOS
M. Mikhemar1, H. Darabi1, A. Abidi2, 1
frequency-selective filters for isolation. The stringent isolation requirements prohibit the integration of RF duplexers on silicon and particularly in CMOS technology. However, CMOS technology offers superior tuning and
ISSCC 2009 Session 22 RF & Wireless
A CMOS Adaptive Antenna-Impedance-Tuning IC Operating in the 850MHz-to-2GHz Band
Hang Song, Bertan Bakkaloglu, James T. Aberle
Adaptive antenna-tuning units (AATUs) provide broadband dynamic tuning to widely-varying antenna impedances caused by the changes in operating frequencies and unpredictable environmental factors. AATUs are becoming a cri
ISSCC 2009 Session 22 RF & Wireless
50-to-67GHz ESD-Protected Power Amplifiers in Digital 45nm LP CMOS
Kuba Raczkowski1,2, Steven Thijs1,2, Walter De Raedt1, Bart Nauwelaers2,
shown that downscaled CMOS is a serious technology candidate to implement transceivers for high-data-rate wireless communication around 60GHz [1,2]. A low-cost implementation is the combination of the digital part with t
ISSCC 2009 Session 22 RF & Wireless
A 60GHz-Band 1V 11.5dBm Power Amplifier with 11% PAE in 65nm CMOS
Wei L. Chan1, John R. Long1, Marco Spirito1, John J. Pekarik2, 1
output power in Fig. 22.4.3. The maximum saturated output power is 11.5dBm, with a peak PAE close to 11% at 9dBm output power. The measured small-signal gain is also slightly higher than given in Fig. 22.4.2 at 58GHz, as
ISSCC 2009 Session 22 RF & Wireless
A Single-Chip Highly Linear 2.4GHz 30dBm Power Amplifier in 90nm CMOS
Debopriyo Chowdhury1, Christopher D. Hull2, Ofir B. Degani2,
Pankaj Goyal2, Yanjie Wang1, Ali M. Niknejad1 University of California, Berkeley, CA Intel, Hillsboro, OR In CMOS PAs, AM-PM distortion is also a major contributor to EVM. To reduce this, a PMOS-based capacitive compensa
ISSCC 2009 Session 22 RF & Wireless
An Octave-Range Watt-Level Fully Integrated CMOS Switching Power Mixer Array for Linearization and Back-Off Efficiency Improvement
Shouhei Kousai1, 2, Ali Hajimiri1
Non-constant envelope modulation schemes have become commonplace in cellular applications due to their higher spectral efficiency. Linear PAs driven by an RF transmitter are usually used to generate these signals faithfu
ISSCC 2009 Session 22 RF & Wireless
A 0.13µm CMOS Power Amplifier with Ultra-Wide Instantaneous Bandwidth for Imaging Applications
Jonathan Roderick, Hossein Hashemi
The increased interest in Ultra-WideBand (UWB) impulse-based systems for high-resolution imaging applications [1] has created a demand for mediumpower linear amplifiers capable of transmitting such signals (FCC limits pe
ISSCC 2009 Session 12 RF & Wireless
A 400-to-900 MHz Receiver with Dual-domain Harmonic Rejection Exploiting Adaptive Interference Cancellation
Niels A. Moseley, Zhiyu Ru, Eric A. M. Klumperink, Bram Nauta
Wideband direct-conversion harmonic-rejection (HR) receivers for softwaredefined radio aim to remove or relax the pre-mixer RF filters, which are inflexible, bulky and costly [1,2]. HR schemes derived from [3] are often
ISSCC 2009 Session 12 RF & Wireless
A Software-Defined Radio Receiver Architecture Robust to Out-of-Band Interference
Z. Ru, E. A. M. Klumperink, G. J. M. Wienk, B. Nauta
In a software-defined radio (SDR) receiver it is desirable to minimize RF bandfiltering for flexibility, size and cost reasons, but this leads to increased outof-band interference (OBI). Besides harmonic and intermodulat
ISSCC 2009 Session 12 RF & Wireless
A 0.75V 325µW 40dB-SFDR Frequency-Hopping Synthesizer for Wireless Sensor Networks in 90nm CMOS
E. Lopelli1, J. D. van der Tang2, K. Philips3, A. H. van Roermund1, B. Gyselinckx3
Frequency-Hopping Spread Spectrum (FHSS) for ultra-low-power Wireless Sensor Networks (WSNs) is the power dissipation of existing solutions. Whereas FHSS would make WSNs very robust and secure in difficult fading (indoor
ISSCC 2009 Session 12 RF & Wireless
A 4.75GHz Fractional Frequency Divider with Digital Spur Calibration in 45nm CMOS
Stefano Pellerano1, Paolo Madoglio2, Yorgos Palaskas1, 1
transceivers. To offset the oscillator frequency from the PA output frequency, SSB mixing or division-by-2 is typically used [1]. However, the first might require additional filtering to remove mixing spurs and the latte
ISSCC 2009 Session 12 RF & Wireless
A 0.6V 380µW -14dBm LO-Input 2.4GHz DoubleBalanced Current-Reusing Single-Gate CMOS Mixer with Cyclic Passive Combiner
Jun Deguchi, Daisuke Miyashita, Mototsugu Hamada
A mixer is one of the bottlenecks in achieving the low-voltage operation of a receiver. Most of the mixer topologies recently reported for low-voltage and low-power applications can be categorized into bulk-injection mix
ISSCC 2009 Session 12 RF & Wireless
A 0.2-to-2.0GHz 65nm CMOS Receiver Without LNA Achieving >11dBm IIP3 and <6.5 dB NF
M. C. M. Soer, E. A. M. Klumperink, Z. Ru, F. E. van Vliet, B. Nauta
Spurious-free dynamic range (SFDR) is a key specification of radio receivers and spectrum analyzers, characterizing the maximum distance between signal and noise+distortion. SFDR is limited by the linearity (intercept po
ISSCC 2009 Session 12 RF & Wireless
A Compact Low-Noise Amplifier in CMOS Weighted Distributed
Yu-Jiu Wang, Ali Hajimiri
The noise figure (NF) of a front-end low-noise amplifier (LNA) places a lower bound on the sensitivity of a receiver. In a conventional LNA, there is a tradeoff between the intrinsic input capacitance of the input transi
ISSCC 2009 Session 12 RF & Wireless
A 3.6mW Differential Common-Gate CMOS LNA with Positive-Negative Feedback
Sanghyun Woo1, Woonyun Kim1, Chang-Ho Lee2, Kyutae Lim1, Joy Laskar1
features superior bandwidth, linearity, stability, and robustness to PVT variations compared to a common-source (CS) topology [1]. In spite of these advantages, the dependence of gain and NF on the restricted transconduc
ISSCC 2009 Session 12 RF & Wireless
A Low-Noise Active Balun with IM2 Cancellation for Multiband Portable DVB-H Receivers
Daniele Mastantuono, Danilo Manstretta
Broadband low noise amplifiers are needed in a variety of applications, from multistandard cellular receivers to terrestrial and handheld TV tuners [1,2]. For broadband and multiband operation, intermodulation and cross-
ISSCC 2008 Session 6 RF & Wireless
A 60kb/s-to-10Mb/s 0.37nJ/b Adaptive-FrequencyHopping Transceiver for Body-Area Network
Namjun Cho, Jeabin Lee, Long Yan, Joonsung Bae, Sunyoung Kim, Hoi-Jun Yoo
and comsumer electronics applications, and its standardization is still in progress. The WPAN standards such as IEEE802.15.4 and 4a do not meet the WBAN requirements such as energy efficiency on the body, scalable QoS, a
ISSCC 2008 Session 6 RF & Wireless
A 90nm CMOS 60GHz Radio
Stephane Pinel, Saikat Sarkar, Padmanava Sen, Bevin Perumana,
in the past few years [1,2]. This paper discusses the integration of a 60GHz CMOS single-chip transmitter and a singlechip receiver using a standard 90nm CMOS technology demonstrating a reliable solution for 60GHz single
ISSCC 2008 Session 6 RF & Wireless
A 0.6-to-10GHz Receiver Front-End in 45nm CMOS
R. van de Beek, J. Bergervoet, H. Kundur, D. Leenaerts, G. van der Weide
various standards including those for cellular, WLAN and WPAN applications. Software-defined radios (SDRs) are being considered as a likely platform to build tomorrow’s handsets. The receiver in such radios can be tuned
ISSCC 2008 Session 6 RF & Wireless
A 3-to-10GHz 14-Band CMOS Frequency Synthesizer with Spurs Reduction for MB-OFDM UWB System
Tai-You Lu, Wei-Zen Chen
As proposed by MB-OFDM alliance, the spectrum for UWB communication system ranges from 3.1-to-10.6GHz, which is divided into 14 bands, each of 528MHz bandwidth, and categorized into 5 groups [1]. To meet the stringent fr
ISSCC 2008 Session 6 RF & Wireless
UWB Fast-Hopping Frequency Generation Based on Sub-Harmonic Injection Locking
Stefano Dal Toso1, Andrea Bevilacqua1, Marc Tiebout2, Stefano Marsili2,
high-data-rate WiMedia UWB systems is to design an efficient LO generation. On one hand, it must fulfill the stringent requirements (multiple LO frequencies, spurious, settling time and I/Q imbalance), and on the other h
ISSCC 2008 Session 6 RF & Wireless
A Fully Integrated 14-Band 3.1-to-10.6GHz 0.13µm SiGe BiCMOS UWB RF Transceiver
O. Werther, M. Cavin, A. Schneider, R. Renninger, B. Liang, L. Bu,
Y. Jin, J. Marcincavage Alereon, Austin, TX UWB is an emerging wireless technology supporting data rates as high as 480Mb/s. The US allows the deployment of UWB systems in the frequency band from 3.1 to 10.6GHz, while ot
ISSCC 2008 Session 6 RF & Wireless
A CMOS UWB Camera with 7×7 Simultaneous Active Pixels
Ta-Shun Chu, Hossein Hashemi
Ultra-wideband (UWB) imaging systems achieve high depth resolution. UWB timed arrays use a collection of spaced antennas to achieve azimuth selectivity as well [1]. The recent trend in realization of integrated beam-form
ISSCC 2008 Session 6 RF & Wireless
A 0.18µm CMOS 802.15.4a UWB Transceiver for Communication and Localization
Yuanjin Zheng, M. Annamalai Arasu, King-Wah Wong, Yen Ju The,
15.4a has specified a UWB PHY for low-rate commutation with ranging capability for wireless personnel area and sensor network applications [1]. Related work is reported on low-rate energy-efficient UWB radios [2-4]. Howe
ISSCC 2008 Session 6 RF & Wireless
A 1.8Gpulses/s UWB Transmitter in 90nm CMOS
Murat Demirkan, Richard R. Spencer
The potential of pulse-based ultra-wideband (UWB) technology has been demonstrated for high-data-rate short-distance wireless personal area networks (e.g., wireless USB) [1-3]. With the allocation of the spectrum from 3.
ISSCC 2008 Session 31 RF & Wireless
Balanced SiGe PA Module for Multi-Band and Multi-Mode Cellular-Phone Applications
Antonino Scuderi, Carmelo Santagati, Michele Vaiana,
STMicroelectronics, Catania, Italy Rapidly expanding market for multi-mode (MM) and multi-band (MB) cellular phones has recently fueled the demand for RF Power Amplifiers (PAs) that are able to operate with 2G, 2.5G and
ISSCC 2008 Session 31 RF & Wireless
A Fully Integrated Quad-Band GSM/GPRS CMOS Power Amplifier
I. Aoki, S. Kee, R. Magoon, R. Aparicio, F. Bohn, J. Zachan,
G. Hatcher, D. McClymont, A. Hajimiri Axiom Microdevices, Irvine, CA There is a strong drive toward handheld communication devices with building blocks that are fully integrated in standard CMOS technologies. Although th
ISSCC 2008 Session 31 RF & Wireless
An Outphasing Power Amplifier for a SoftwareDefined Radio Transmitter
Shervin Moloudi1, Koji Takinami2, Michael Youssef1,
transmitter needs a universal modulator and power amplifier to support any modulation in any band. There is a simple solution, namely, a Cartesian I-Q upconverter followed by a linear power amplifier, but for complex mod
ISSCC 2008 Session 31 RF & Wireless
A 28.6dBm 65nm Class-E PA with Envelope Restoration by Pulse-Width and Pulse-Position Modulation
Jeffrey Walling1,2, Hasnain Lakdawala2, Yorgos Palaskas2,
near-watt-level output power in nanometer CMOS is difficult to satisfy owing to the power supply voltage scaling with minimum feature size. High performance is problematic because most PA interfaces are defined by a 50Ω