全部论文

Papers 2008–2026

共 3875 篇 ISSCC 论文，按年份倒序排列

年份 Year
2026 2472025 2422024 2222023 2002022 1672021 1952020 2022019 1812018 2052017 2082016 2002015 1912014 2032013 2102012 1882011 1962010 2102009 1802008 228
领域 Topic
RF & Wireless 362Power Management 302Wireline I/O 300Wireless 293Data Converters 279Digital Processors 268Memory 266AI / ML 231Digital Circuits 220Medical & Bio 211Image Sensors 184Analog Circuits 169mm-Wave 138Clocking & PLLs 127Sensors 100Plenary 63Hardware Security 36Quantum & Photonics 29Industry Highlights 7
顶级机构
University of California 101Delft University of Technology 73University of Macau 58KAIST 51Massachusetts Institute of Tec 48Tsinghua University 39National Taiwan University 38University of Michigan 37Georgia Institute of Technolog 35Columbia University 28Hong Kong University of Scienc 24MediaTek 23
ISSCC 2023 Session 28 RF & Wireless
A 1.1V 16Gb DDR5 DRAM with Probabilistic-Aggressor
Tracking, Refresh-Management Functionality, Per-Row
Hammer Tracking, a Multi-Step Precharge, and Core-Bias Modulation for Security and Reliability Enhancement Woongrae Kim, Chulmoon Jung, Seongnyuh Yoo, Duckhwa Hong, Jeongjin Hwang, Jungmin Yoon, Ohyong Jung, Joonwoo Choi
ISSCC 2023 Session 28 RF & Wireless
A 1.1V 6.4Gb/s/pin 24-Gb DDR5 SDRAM with a Highly-Accurate Duty Corrector and NBTI-Tolerant DLL
Daehyun Kwon, Heon Su Jeong, Jaemin Choi, Wijong Kim, Jae Woong Kim,
Junsub Yoon, Jungmin Choi, Sanguk Lee, Hyunsub Norbert Rie, Jin-il Lee, Jongbum Lee, Taeseong Jang, JunHyung Kim, Sanghee Kang, Jungbum Shin, Yanggyoon Loh, Chang Yong Lee, Junmyung Woo, Hyeseung Yu, Changhyun Bae, Reum
ISSCC 2023 Session 28 RF & Wireless
A 32Gb/s/pin 0.51pJ/b Single-Ended Resistor-less Impedance-Matched Transmitter with a T-Coil-Based Edge-Boosting Equalizer in 40nm CMOS
Jung-Hun Park1, Hyeonseok Lee1, Hoyeon Cho1, Sanghee Lee1,
demand, the DRAM interface bandwidth also increases steeply each year; for graphics applications, the bandwidth per pin has increased to 27Gb/s/pin, thanks to T-coils implemented using RDL layers [1]. As I/O hardware exp
Kwang-Hoon Lee1, Han-Gon Ko2, Deog-Kyoon Jeong1 Seoul National Univers
ISSCC 2023 Session 28 RF & Wireless
A 4nm 1.15TB/s HBM3 Interface with Resistor-Tuned Offset-Calibration and In-Situ Margin-Detection
Kwanyeob Chae, Jiyeon Park, Jaegeun Song, Billy Koo, Jihun Oh,
Shinyoung Yi, Won Lee, Dongha Kim, Taekyung Yeo, Kyeongkeun Kang, Sangsoo Park, Eunsu Kim, Sukhyun Jung, Sanghune Park, Sungcheol Park, Mijung Noh, Hyogyuem Rhew, Jongshin Shin Samsung Electronics, Hwaseung, Korea A crit
ISSCC 2023 Session 28 RF & Wireless
A 4nm 16Gb/s/pin Single-Ended PAM4 Parallel Transceiver with Switching-Jitter Compensation and Transmitter Optimization
Jahoon Jin, Soo-Min Lee, Kyunghwan Min, Sodam Ju, Jihoon Lim,
communication, deep learning, advanced driverassistance systems (ADAS), and extended reality (XR), have fueled demand for increased computing power and per-pin interface bandwidth. Recently, four-level pulse-amplitude mo
Hyunsu Chae, Kwonwoo Kang, Yunji Hong, Yeongcheol Jeong, Sang-Ho Kim,
ISSCC 2023 Session 28 RF & Wireless
A High-Performance 1Tb 3b/Cell 3D-NAND Flash with a 194MB/s Write Throughput on over 300 Layers
Byungryul Kim, Seungpil Lee, Beomseok Hah, Kangwoo Park, Yongsoon Park,
Kangwook Jo, Yujong Noh, Hyeoncheon Seol, Hyunsoo Lee, Jaehyeon Shin, Seongjin Choi, Youngdon Jung, Sungho Ahn, Yonghun Park, Sujeong Oh, Myungsu Kim, Seonguk Kim, Hyunwook Park, Taeho Lee, Haeun Won, Minsung Kim, Cheulh
ISSCC 2023 Session 27 Other
The Promise of 2-D Materials for Scaled Digital and Analog Applications
Devin Verreck, Piet Wambacq, Maarten Van de Put, Zubair Ahmed,
Quentin Smets, Aryan Afzalian, Rutger Duflou, Xiangyu Wu, Gioele Mirabelli, Rongmei Chen, Inge Asselberghs, Gouri Sankar Kar imec, Leuven, Belgium Until the early 2000s, two-dimensional (2-D) materials were presumed to b
ISSCC 2023 Session 27 Other
The Tall Thin Molecular Programmer Erik Winfree
California Institute of Technology, Pasadena, CA, Solid-state electronic circuits have grown at an astounding rate since
the transistor in 1947, with transistor counts roughly doubling every two years and now exceeding 100 billion on a single chip. One reason this was possible is that computers are an information technology, which permits
ISSCC 2023 Session 27 Other
Some Recent Progress in Bioelectronics John Rogers
Northwestern University, Evanston, IL, The human body relies on sensing and actuating systems that operate in feedback l
with features that adapt, resorb and reconstruct in a time-dynamic manner to sustain life processes. Bio-integrated electronic systems that capture certain of these essential attributes, in the form of closed-feedback ne
ISSCC 2023 Session 26 Medical & Bio
A 45.8dB-SNR 120fps 100pF-Load Self-Capacitance Touch-Screen Controller with Enhanced In-Band Common Noise Immunity Using Noise Antenna Reference
Sanho Byun, Heejin Lee, Tae-Gyun Song, Jinchul Lee, Jongmin Baek,
self-capacitance sensing has been mostly used for the following purposes: (1) to realize multi-touch on the matrix sensor, especially in full in-cell LCDs [1], and (2) to distinguish false touches at which water is dropp
Gyeongmin Ha, Seunghoon Baek, Yeongmin Kim, Wongab Jung, Hyun-Wook Lim
ISSCC 2023 Session 26 Medical & Bio
Virtual Rotating Gesture Recognizable Touch Readout IC for 1.26” Circular Touch Screen Panel
Seunghoon Ko1, Junmin Lee1, Juwon Ham1, Byungcheol So2, Daeyeol Cho2,
interaction systems in mobile devices. In addition to traditional capacitive touch systems, a stylus is becoming mainstream, which is a very useful feature for large-sized tablet PCs [1]. However, wearable devices, which
Hyeongjoon Kim2, Bokman Kim2, Woogeun Sim2, Gyutae Youm2 Kwangwoon Uni
ISSCC 2023 Session 26 Medical & Bio
A Source-Driver IC Including Power-Switching Fast-Slew-Rate Buffer and 8Gb/s Effective 3-Tap DFE Receiver Achieving 4.9mV DVRMS and 17V/µs Slew Rate for 8K Displays and Beyond
Kyungho Ryu*, Ji-Yong Jeong*, Jung-Pil Lim, Kil-Hoon Lee, Kyongho Kim,
and faster refresh rate displays, the nextgeneration TVs and gaming monitors are expected to accommodate 8K resolution with a refresh rate of 120Hz and beyond. In such display systems, about one thousand channels will be
Yongil Kwon, Seongjong Yoo, Siwoo Kim, Hyun-Wook Lim, Jae-Youl Lee Sam
ISSCC 2023 Session 25 RF & Wireless
A 1-to-5GHz All-Passive Frequency-Translational 4th-Order N-path Filter with Low-Power Clock Boosting for High Linearity and Relaxed Pdc-Frequency Trade-Off to the LO overlap while using 2× higher-duty-cycle clocks, thereby enabling a 4 to 5× higher operating frequency compared to higher-order N-path filters [1-5]. These inductors do not limit tuning range at all, unlike the coupling inductors in prior higherorder N-path topologies.
Aravind Nagulu1, Mingyu Yi 1, Yi Zhuang1, Sasank Garikapati2, Harish Krishnaswamy2
The higher-order N-path filter was designed to operate from 1 to 5GHz. The three capacitors CF, CG, and CB of the baseband elliptical-LPF loads are designed with a 5b control to program the bandwidth, selectivity, and OO
ISSCC 2023 Session 25 RF & Wireless
A 4b RFDAC at 8GS/s for FMCW Chirps with 4GHz Bandwidth in 10µs
Soumya Krishnapuram Sireesh1,2, Sanaz Hadipour Abkenar1,2,
Niels Christoffers1, Christoph Wagner1, Thorsten Brandt1, Andreas Stelzer2 Infineon Technologies, Linz, Austria Johannes Kepler University, Linz, Austria 1 2 A frequency-modulated continuous-wave (FMCW) radar is highly r
ISSCC 2023 Session 25 RF & Wireless
A 19.7-to-43.8GHz Power Amplifier with Broadband Linearization Technique in 28nm Bulk CMOS
Weisen Zeng1, Li Gao1, Ningzheng Sun1, Hongtao Xu2, Quan Xue1, Xiuyin Zhang1
Fudan University, Shanghai, China 1 2 5G mm-wave systems in the frequency-range-2 (FR2) band (ranging from 24.25 to 43.5GHz) are expected to provide multi-gigabit-per-second (mGb/s) data-rates. Different FR2 bands are em
South China University of Technology, Guangzhou, China
ISSCC 2023 Session 25 RF & Wireless
A 4.1W Quadrature Doherty Digital Power Amplifier with 33.6% Peak PAE in 28nm Bulk CMOS
Jiaxiang Li1, Yun Yin1, Hang Chen2, Jie Lin1, Yicheng Li1, Xianglong Jia1,
and higher output-power requirements, especially at the base station side. As shown in Fig. 25.1.1, compared to the traditional analog-transmitter architectures with high-power GaAs/GaN poweramplifier (PA) modules, digit
Zhen Hu1, Xiuyin Zhang2, Hongtao Xu1 Fudan University, Shanghai, China
ISSCC 2023 Session 24 mm-Wave
A 200-to-350GHz SiGe BiCMOS Frequency Doubler with Slotline-Based Mode-Decoupling Harmonic-Tuning Technique Achieving 1.1-to-4.7dBm Output Power
Shuyang Li1, Xingcun Li1,2, Huibo Wu1, Wenhua Chen1
Sanechips Technology, Shenzhen, China 1 2 Silicon-based ultra-broadband terahertz (THz) generation has attracted growing interest in recent years, as it provides a low-cost and high-integration solution for high-resoluti
Tsinghua University, Beijing, China
ISSCC 2023 Session 24 mm-Wave
A 0.64-to-0.69THz Beam-Steerable Coherent Source with 9.1dBm Radiated Power and 30.8dBm Lensless EIRP in 65nm CMOS
Liang Gao, Chi Hou Chan
Si-based compact terahertz (THz) integrated systems have been successfully demonstrated in imaging, spectroscopy, high-speed data transmission, and radar applications in the low-THz band [1]. A THz signal source is indis
City University of Hong Kong, Hong Kong, China
ISSCC 2023 Session 23 Analog Circuits
A BJT-Based Temperature Sensor with ±0.1°C (3σ) Inaccuracy from -55°C to 125°C and a 0.85pJ∙K2 Resolution FoM Using Continuous-Time Readout
Nandor G. Toth*1, Zhong Tang1, Teruki Someya1,3, Sining Pan*1,2, Kofi A. A. Makinwa1
temperature sensors are widely used due to their high accuracy over a wide temperature range with a low-cost 1-point trim. Although resistor-based sensors can achieve better energy efficiency, they typically require a 2-
Delft University of Technology, Delft, The Netherlands Tsinghua Univer
ISSCC 2023 Session 23 Analog Circuits
A 2.98pJ/conversion 0.0023mm2 Dynamic Temperature Sensor with Fully On-Chip Corrections
Yuting Shen, Hanyue Li, Eugenio Cantatore, Pieter Harpe
Nowadays, many battery-operated SoCs for IoT and environmental monitoring applications are equipped with temperature sensors. In these miniaturized systems, power and area are two critical concerns. One challenge for tem
Eindhoven University of Technology, Eindhoven, The Netherlands
ISSCC 2023 Session 23 Analog Circuits
A Sub-1V 810nW Capacitively-Biased BJT-Based Temperature Sensor with an Inaccuracy of ±0.15°C (3σ) from -55°C to 125°C
Zhong Tang1, Sining Pan1,2, Kofi A. A. Makinwa1
Tsinghua University, Beijing, China 1 2 BJT-based temperature sensors are widely used because they can achieve excellent accuracy after 1-point calibration. However, they typically dissipate µWs of power and require supp
Delft University of Technology, Delft, The Netherlands
ISSCC 2023 Session 23 Analog Circuits
A Closed-Loop 12bit CMOS-Integrated Stress Sensor System with 4bit Adjustable Sensitivity from 178 to 11kPa/LSB at up to 22.5kS/s and 5bit Dynamic Range Adjustment.
Kim Allinger1, Matthias Kuhl2
University of Freiburg - IMTEK, Freiburg, Germany 1 2 The increasing popularity of integrated stress sensors due to emerging fields such as Internet-of-Things (IoT), robotics and predictive maintenance led to various imp
Hamburg University of Technology, Hamburg, Germany
ISSCC 2023 Session 23 Analog Circuits
A 51A Hybrid Magnetic Current Sensor with a Dual Differential DC Servo Loop and 43mArms Resolution in a 5MHz Bandwidth
Amirhossein Jouyaeian1, Qinwen Fan1, Mario Motz2, Udo Ausserlechner2, Kofi A. A. Makinwa1
Each quadrature component is chopper demodulated and then integrated via Rs3 (=10M&) and Cfsp (=5pF) to generate a correction signal that is upmodulated and fed back to A4 via an auxiliary input stage. The offset of A4 i
Delft University of Technology, Delft, The Netherlands Infineon Techno
ISSCC 2023 Session 23 Analog Circuits
A 40A Shunt-Based Current Sensor with ±0.2% Gain Error from -40°C to 125°C and Self-Calibration
Zhong Tang1, Nandor G. Toth1, Roger Zamparette1, Tomohiro Nezuka2,
Yoshikazu Furuta2, Kofi A. A. Makinwa1 Delft University of Technology, Delft, The Netherlands MIRISE Technologies, Aichi, Japan 1 2 Low-cost metal (e.g., PCB trace) shunts can be used to make accurate current sensors (<1
ISSCC 2023 Session 23 Analog Circuits
A 7.9fJ/Conversion-Step and 37.12aFrms Pipelined-SAR Capacitance-to-Digital Converter with kT/C Noise Cancellation and Incomplete-Settling-Based Correlated Level Shifting
Jihang Gao1, Linxiao Shen1, Heyi Li1, Siyuan Ye1, Jie Li1, Xinhang Xu1, Jiajia Cui1,
sensor applications, capacitive sensors are widely used to convert various capacitances into digital signals, and the demand for power-efficient high-resolution capacitance-to-digital converters (CDCs) is on the rise. In
Yunhung Gao1, Ru Huang1, Le Ye1,2 Peking University, Beijing, China Ad
ISSCC 2023 Session 22 AI / ML
A 12nm 18.1TFLOPs/W Sparse Transformer Processor with
Entropy-Based Early Exit, Mixed-Precision Predication and, Fine-Grained Power Management
Thierry Tambe1, Jeff Zhang1, Coleman Hooper1, Tianyu Jia2, Paul N. Whatmough1,3, Joseph Zuckerman4, Maico Cassel Dos Santos4, Erik Jens Loscalzo4, Davide Giri4, Kenneth Shepard4, Luca Carloni4, Alexander Rush5, David Bro
ISSCC 2023 Session 22 Other
A 0.81mm2 740µW Real-Time Speech Enhancement Processor Using Multiplier-Less PE Arrays for Hearing Aids in 28nm CMOS
Sungjin Park, Sunwoo Lee, Jeongwoo Park, Hyeong-Seok Choi, Dongsuk Jeon
Speech enhancement (SE) is a task to improve voice quality and intelligibility by removing noise from the audio, which is widely adopted in hearing assistive devices. Hearing aids are generally worn in or behind the ear,
Seoul National University, Seoul, Korea
ISSCC 2023 Session 22 Other
DL-VOPU: An Energy-Efficient Domain-Specific Deep-LearningBased Visual Object Processing Unit Supporting Multi-Scale Semantic Feature Extraction for Mobile Object Detection/Tracking Applications
Yuchuan Gong, Teng Zhang, Hongtao Guo, Xiyuan Liu, Jingxiao Zheng,
years, deep learning-based visual object detection/tracking (VODT) has been widely used in intelligent applications such as autonomous driving, UAV, smart robot and VR/AR. As general AI hardware platforms, GPUs and gener
Hongqiang Wu, Conghan Jia, Luying Que, Liang Zhou, Liang Chang, Jun Zh
ISSCC 2023 Session 22 AI / ML
ANP-I: A 28nm 1.5pJ/SOP Asynchronous Spiking Neural Network Processor Enabling Sub-0.1µJ/Sample On-Chip Learning for Edge-AI Applications
Jilin Zhang1, Dexuan Huo1, Jian Zhang1, Chunqi Qian1, Qi Liu1, Liyang Pan1,
With the development of on-chip learning processors for edge-AI applications, energy efficiency of NN inference and training is more and more critical. As on-chip training energy dominates the energy consumption of edge-
Zhihua Wang1, Ning Qiao2, Kea-Tiong Tang3, Hong Chen1 Tsinghua Univers
ISSCC 2023 Session 22 AI / ML
C-DNN: A 24.5-85.8TOPS/W Complementary-Deep-NeuralNetwork Processor with Heterogeneous CNN/SNN Core Architecture and Forward-Gradient-Based Sparsity Generation
Sangyeob Kim, Soyeon Kim, Seongyon Hong, Sangjin Kim, Donghyeon Han, Hoi-Jun Yoo
have been shown to achieve the same accuracy as Convolutional-Neural-Networks (CNNs). By using CNN-to-SNN conversion, SNNs become a promising candidate for ultra-low power AI applications [1]. For example, compared to BN
Korea Advanced Institute of Science and Technology, Daejeon, Korea Spi
ISSCC 2023 Session 22 Other
A 28nm 11.2TOPS/W Hardware-Utilization-Aware Neural-Network Accelerator with Dynamic Dataflow
Cheng-Yan Du1, Chieh-Fu Tsai2, Wen-Ching Chen3, Liang-Yi Lin3,
Research Institute, Hsinchu, Taiwan 1 With the rapid evolution of AI technology, various neural network structures have been developed for diverse applications. As a typical ease, Fig. 22.4.1 shows that the convolution (
Nian-Shyang Chang3, Chun-Pin Lin3, Chi-Shi Chen3, Chia-Hsiang Yang1 Na
ISSCC 2023 Session 22 AI / ML
A 127.8TOPS/W Arbitrarily Quantized 1-to-8b ScalablePrecision Accelerator for General-Purpose Deep Learning
with Reduction of Storage, Logic and Latency Waste
deep learning accelerators has focused on inference tasks to improve performance by means of maximally utilizing sparsity and quantization. Unlike CNN-only networks, however, recent state-of-the-art (SOTA) models consist
Seunghyun Moon1, Han-Gyeol Mun1, Hyunwoo Son2, Jae-Yoon Sim1 Pohang Un
ISSCC 2023 Session 22 Other
A 28nm 2D/3D Unified Sparse Convolution Accelerator with Block-Wise Neighbor Searcher for Large-Scaled Voxel-Based Point Cloud Network
Wenyu Sun1, Xiaoyu Feng1, Chen Tang1, Shupei Fan1, Yixiong Yang1,
important role in many emerging applications such as autonomous driving, visual navigation and virtual reality. Recent research shows that adopting 3D voxel-based sparse convolution (SCONV) as a backbone can achieve bett
Jinshan Yue2, Huazhong Yang1, Yongpan Liu1 Tsinghua University, Beijin
ISSCC 2023 Session 22 Other
A 12.4TOPS/W @ 136GOPS AI-IoT System-on-Chip with 16
RISC-V, 2-to-8b Precision-Scalable DNN Acceleration and, 30%-Boost Adaptive Body Biasing
Francesco Conti1, Davide Rossi1, Gianna Paulin2, Angelo Garofalo1, Alfio Di Mauro2, Georg Rutishauer2, Gianmarco Ottavi1, Manuel Eggimann2, Hayate Okuhara1, Vincent Huard3, Olivier Montfort3, Lionel Jure3, Nils Exibard3,
ISSCC 2023 Session 21 Other
ASIL-D Compliant Battery Monitoring IC with High Measurement Accuracy and Robust Communication
Jong-Kyoung Lee1,2, Sunsik Woo2, Wooyoung Jeong2, Kwang-Seok Oh2,
Donghyeon Kim2, Youngwoon Ko2, Jin-Yong Jeon2, Jooho Lee2, Young-Suk Son2, Sang-Gug Lee1, Kyeongha Kwon1 Korea Advanced Institute of Science and Technology, Daejeon, Korea Autosilicon, Daejeon, Korea 1 2 Electric vehicle
ISSCC 2023 Session 21 Other
An LTE-Harvesting BLE-to-WiFi Backscattering Chip for Single-Device RFID-Like Interrogation
Shih-Kai Kuo*, Manideep Dunna*, Hongyu Lu, Akshit Agarwal,
Dinesh Bharadia, Patrick P. Mercier University of California, San Diego, CA *Equally Credited Authors (ECAs) Recent work in backscatter modulation has enabled very low-power communication between an IoT tag and commodity
ISSCC 2023 Session 21 Other
A 263GHz 32-Channel EPR-on-a-Chip Injection-Locked VCO-Array
Anh Chu*1, Michal Kern*1, Khubaib Khan1, Klaus Lips2, Jens Anders1,3
Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin, Germany 3 Institute for Microelectronics Stuttgart (IMS CHIPS), Stuttgart, Germany *Equally Credited Authors (ECAs) 1 2 Electron paramagnetic resonance (EPR)
University of Stuttgart, Stuttgart, Germany
ISSCC 2023 Session 21 Other
A CMOS Multi-Functional Biosensor Array for Rapid LowConcentration Analyte Detection with On-Chip DEP-Assisted Active Enrichment and Manipulation with No External Electrodes
Dongwon Lee1, Doohwan Jung2, Fuze Jiang1, Gregory Villiam Junek3,
Diego, CA 1 3 Electronic biosensors are transducers that convert biomolecular or cellular information to electronic readouts. Though advances in electronics keep improving biosensors’ performance, often their ultimate de
Jongseok Park4, Hangxing Liu1, Ying Kong1, Youngin Kim1, Jing Wang1, H
ISSCC 2023 Session 21 Other
A 22µW Peak Power Multimodal Electrochemical Sensor Interface IC for Bioreactor Monitoring
Qiuyang Lin1, Wim Sijbers1, Christina Avdikou1, Didac Gomez1,2,
The Netherlands 1 2 Bioreactors are employed in many industries like food, beverage, chemical, and biopharmaceutical to grow biologically active compounds. Bioreactors range in size from large industrial tanks for manufa
Dwaipayan Biswas1, Sneha Sneha3, Anastasios Malissovas3, Bernardo Tacc
ISSCC 2023 Session 21 Other
A 65nm CMOS Living-Cell Dynamic Fluorescence Sensor with 1.05fA Sensitivity at 600/700nm Wavelengths
Fatemeh Aghlmand1, Chelsea Hu1,2, Saransh Sharma1, Krishna K. Pochana1,
Richard M. Murray1, Azita Emami1 California Institute of Technology, Pasadena, CA Texas A&M University, College Station, TX 1 2 Integrated, low-cost and miniaturized devices that can detect clinically relevant biomarkers
ISSCC 2023 Session 20 Power Management
Multiple-Phase Accelerated Current Control in Bidirectional Energy Transfer of Automotive High-Voltage and Low-Voltage Batteries
Tz-Wun Wang1, Si-Yi Li1, Sheng-Hsi Hung1, Tzu-Ying Wu1, Chi-Yu Chen1,
Hsinchu, Taiwan 3 Realtek Semiconductor, Hsinchu, Taiwan 1 2 48V and 12V power supplies play a critical role in electric vehicle (EV) power systems. In general, 48V transfers energy to 12V to supply lidar, camera, sensor
Po-Jui Chiu1, Ke-Horng Chen1, Kuo-Lin Zheng1,2, Ying-Hsi Lin3, Tsung-Y
ISSCC 2023 Session 20 Power Management
A GaN Gate Driver with On-chip Adaptive On-time Controller and Negative Current Slope Detector
Shu-Yung Lin1, Ssu-Yu Lin1, Sheng-Hsi Hung1, Tz-Wun Wang1, Ching-Ho Li1,
Chang-Lin Go1, Shao-Chang Huang1, Ke-Horng Chen1, Kuo-Lin Zheng1,2, Ying-Hsi Lin3, Shian-Ru Lin3, Tsung-Yen Tsai3 National Yang Ming Chiao Tung University, Hsinchu, Taiwan Chip-GaN Power Semiconductor, Hsinchu, Taiwan 3
ISSCC 2023 Session 20 Power Management
A Condition-Adaptive ∆f3-EMI Control GaN Switching Regulator With Modulation Frequency Envelope Tracking For Full-Spectrum Automotive CISPR 25 Compliance
Lixiong Du1, Dong Yan1,2, D. Brian Ma1
Texas Instruments, Dallas, TX 1 2 As the fastest growing sector of global IC market, automotive IC industry advances quickly toward record high levels of electrification, communication, sensing and autonomous driving. A
University of Texas at Dallas, Richardson, TX
ISSCC 2023 Session 20 Power Management
A High Common-Mode Transient Immunity GaN-on-SOI Gate Driver for High dV/dt SiC Power Switch
Si-Yi Li1, Wei-Chien Hung1, Tz-Wun Wang1, Ya-Ting Hsu1, Ke-Horng Chen1,
Semiconductor, Hsinchu, Taiwan 1 2 Silicon carbide (SiC) MOSFET devices offer better performance in high-voltage (HV) and high-current applications, such as electric vehicles, railways, and motor drives due to their low
Kuo-Lin Zheng1,2, Ying-Hsi Lin3, Shian-Ru Lin3, Tsung-Yen Tsai3 Nation
ISSCC 2023 Session 2 Digital Processors
MetaVRain: A 133mW Real-Time Hyper-Realistic 3D-NeRF Processor with 1D-2D Hybrid-Neural Engines for Metaverse on Mobile Devices
Donghyeon Han, Junha Ryu, Sangyeob Kim, Sangjin Kim, Hoi-Jun Yoo
A neural radiance field (NeRF) [1] uses a deep neural network (DNN) to create 3D models by training the DNN to memorize 3D scene geometry from a few photos. Prior work uses conventional computer graphic algorithms, such
Korea Advanced Institute of Science and Technology, Daejeon, Korea
ISSCC 2023 Session 2 AI / ML
VISTA: A 704mW 4K-UHD CNN Processor for Video and Image Spatial/Temporal Interpolation Acceleration
Kai-Ping Lin, Jia-Han Liu, Jyun-Yi Wu, Hong-Chuan Liao, Chao-Tsung Huang
Video convolutional neural networks (CNNs) have achieved great success in highresolution imaging applications, such as video super-resolution (VSR) and demonstrated superior quality and temporal consistency by leveraging
National Tsing Hua University, Hsinchu, Taiwan
ISSCC 2023 Session 2 Digital Processors
A 28nm 142mW Motion-Control SoC for Autonomous Mobile Robots
I-Ting Lin1, Zih-Sing Fu1, Wen-Ching Chen2, Liang-Yi Lin2, Nian-Shyang Chang2,
(AMRs) have proven useful for smart factories and have potential to revolutionize critical missions, such as disaster rescue [1]. As illustrated in Fig. 2.5.1, AMRs can perceive the environment, plan for assigned tasks a
Chun-Pin Lin2, Chi-Shi Chen2, Chia-Hsiang Yang1 National Taiwan Univer
ISSCC 2023 Session 2 Digital Processors
A Fully Integrated End-to-End Genome Analysis Accelerator for Next-Generation Sequencing
Yen-Lung Chen*1, Chung-Hsuan Yang*1, Yi-Chung Wu*1, Chao-Hsi Lee2,
Wen-Ching Chen3, Liang-Yi Lin3, Nian-Shyang Chang3, Chun-Pin Lin3, Chi-Shi Chen3, Jui-Hung Hung2,4, Chia-Hsiang Yang1,2 National Taiwan University, Taipei, Taiwan GeneASIC Technologies, Hsinchu, Taiwan 3 Taiwan Semicondu
ISSCC 2023 Session 2 Digital Processors
Amorphica: 4-Replica 512 Fully Connected Spin 336MHz Metamorphic Annealer with Programmable Optimization Strategy and Compressed-Spin-Transfer Multi-Chip Extension
Kazushi Kawamura*1, Jaehoon Yu*1, Daiki Okonogi1, Satoru Jimbo1,
Genta Inoue1, Akira Hyodo1, Ángel López García-Arias1, Kota Ando2, Bruno Hideki Fukushima-Kimura2, Ryota Yasudo3, Thiem Van Chu1, Masato Motomura1 Tokyo Institute of Technology, Yokohama, Japan, 2Hokkaido University, Sap
ISSCC 2023 Session 2 Digital Processors
A 5G Mobile Gaming-Centric SoC with High-Performance Thermal Management in 4nm FinFET
Bo-Jr Huang, Alfred Tsai, Lear Hsieh, Kathleen Chang, C.-J. Tsai,
Jia-Ming Chen, Eric Jia-Wei Fang, Sung S.-Y. Hsueh, Jack Ciao, Barry Chen, Chuck Chang, Ping Kao, Ericbill Wang, Harry H. Chen, Hugh Mair, Shih-Arn Hwang MediaTek, Hsinchu, Taiwan In recent years, mobile gaming has grown