ISSCC 2016
Session 19
Digital Circuits
A 0.17-to-3.5mW 0.15-to-5GHz SoC PLL with 15dB Built-In Supply Noise Rejection and Self-Bandwidth Control in 14nm CMOS
architectures can employ more than 20 PLLs [1]. To address SoC clocking needs with an ever reducing power budget, a deep sub-mW to low-mW PLL having a FoM between -226dB and -234dB from 0.8GHz to 5GHz is presented. The P
ISSCC 2016
Session 19
Digital Circuits
A 2.4GHz 1.5mW Digital MDLL Using Pulse-Width Comparator and Double Injection Technique in 28nm CMOS
low-jitter clock generator, as it does not suffer much from jitter accumulation [1-4]. By periodically replacing the output edge of the oscillator by a clean edge of the reference, an MDLL has a large effective loop band
ISSCC 2016
Session 19
Digital Circuits
A 0.2-to-1.45GHz Subsampling Fractional-N AllDigital MDLL with Zero-Offset Aperture PD-Based Spur Cancellation and In-Situ Timing Mismatch Detection
Multiplying delay-locked loops (MDLLs) are gaining popularity due to their superior noise performance over conventional phase-locked loops (PLLs) [1,2]. Recent designs are trending towards an all-digital implementation t
ISSCC 2016
Session 19
Digital Circuits
A 0.5-to-9.5GHz 1.2µs-Lock-Time Fractional-N DPLL with ±1.25% UI Period Jitter in 16nm CMOS For Dynamic Frequency and Core-Count Scaling in SoC
incorporate power management techniques such as dynamic frequency scaling (DFS), which dynamically changes operating frequencies, and dynamic core-count scaling (DCCS), which rapidly power cycles the cores between active
ISSCC 2016
Session 18
Memory
An 1.1V 68.2GB/s 8Gb Wide-IO2 DRAM with Non-Contact Microbump I/O Test Scheme
Tae Yong Lee, Nohhyup Kwak, Woo Yeol Shin, Na Yeon Kim, Yunseok Hong, Kyeong Pil Kang, Dong Yoon Ka, Seong Ju Lee, Yong Sun Kim, Young Kyu Noh, Jaehoon Kim, Dong Keum Kang, Ho Uk Song, Hyeon Gon Kim, Jonghoon Oh SK hynix
ISSCC 2016
Session 18
Memory
A 1.2V 64Gb 8-Channel 256GB/s HBM DRAM with Peripheral-Base-Die Architecture and Small-Swing Technique on Heavy Load Interface
Dae Suk Kim, Chunseok Jeong, Tae Sik Yun, Hongjung Kim, Ho Sung Cho, Yeon Ok Kim, Jae Hwan Kim, Jin Ho Kim, Sangmuk Oh, Hyun Sung Lee, Ki Hun Kwon, Dong Beom Lee, Young Jae Choi, Jeajin Lee, Hyeon Gon Kim, Jun Hyun Chun,
ISSCC 2016
Session 18
Memory
A 1.2V 20nm 307GB/s HBM DRAM with At-Speed Wafer-Level I/O Test Scheme and Adaptive Refresh Considering Temperature Distribution
Seong-Young Seo, Min-Sang Park, Dong-Hak Shin, Won-Chang Jung, Sang-Hoon Shin, Je-Min Ryu, Hye-Seung Yu, Jae-Hun Jung, Kyung-Woo Nam, Seouk-Kyu Choi, Jae-Wook Lee, Uksong Kang, Young-Soo Sohn, Jung-Hwan Choi, Chi-Wook Ki
ISSCC 2016
Session 18
Memory
A 20nm 9Gb/s/pin 8Gb GDDR5 DRAM with an
Hye-Yoon Joo, Seung-Jun Bae, Young-Soo Sohn, Young-Sik Kim, Kyung-Soo Ha, Min-Su Ahn, Young-Ju Kim, Yong-Jun Kim, Young-Ju Kim, Ju-Hwan Kim, Won-Jun Choi, Chang-Ho Shin, Soo Hwan Kim, Byeong-Cheol Kim, Seung-Bum Ko, Kwan
ISSCC 2016
Session 17
Memory
A Reconfigurable Dual-Port Memory with Error Detection and Correction in 28nm FDSOI
systems-on-chip and usually limits their voltage scalability, due to the major impact of process/voltage/temperature (PVT) variations at low voltages [1]. Assist techniques to extend SRAM operating voltage range improve
ISSCC 2016
Session 17
Memory
Mb/mm2 1R1W 8T SRAM Arrays Operating down to 560mV Utilizing Small-Signal Sensing with Charge-Shared Bitline and Asymmetric Sense Amplifier in 14nm FinFET CMOS Technology
which use multiport memories to improve performance by enabling multiple simultaneous operations in the same memory bank. Conventional 2-read/write 8T dual-port SRAMs (2RW) suffer from read and write disturb issues when
ISSCC 2016
Session 17
Memory
A 10nm FinFET 128Mb SRAM with Assist
Taejoong Song, Woojin Rim, Sunghyun Park, Yongho Kim, Jonghoon Jung, Giyong Yang, Sanghoon Baek, Jaeseung Choi, Bongjae Kwon, Yunwoo Lee, Sungbong Kim, Gyuhong Kim, Hyo-Sig Won, Ja-Hum Ku, Sunhom Steve Paak, ES Jung, Ste
ISSCC 2016
Session 16
Other
A 3-to-40V 10-to-30MHz Automotive-Use GaN Driver with Active BST Balancing and VSW DualEdge Dead-Time Modulation Achieving 8.3% Efficiency Improvement and 3.4ns Constant Propagation Delay
automotive electronics has placed mounting pressure on silicon-based power converters to be increasingly reliable and efficient. Automotive electronics operate from the car battery (VIN) which experiences cold-cranks and
ISSCC 2016
Session 16
Other
A Fully-Integrated Half-Duplex Data/Power
isolation is becoming an essential requisite for several low-power applications, such as sensor interfaces and medical devices. In the last years, different solutions of silicon-integrated data transmission with galvanic
ISSCC 2016
Session 16
Other
Flexible Thin-Film NFC Transponder Chip Exhibiting Data Rates Compatible to ISO NFC Standards Using Self-Aligned Metal-Oxide TFTs
logic circuits, we have measured 19-stage ring oscillators. Figure 16.6.3 plots the measured stage delay as a function of varying supply voltage. At 0.5V VDD and 1V Vbias, the ring oscillator exhibits a frequency of 28kH
ISSCC 2016
Session 16
Other
A Flexible Thin-Film Pixel Array with a Chargeto-Current Gain of 59μA/pC and 0.33% Nonlinearity and a Cost Effective Readout Circuit for Large-Area X-ray Imaging
medical-grade, high resolution, high dynamic range X-ray backplane based on a-IGZO thin-film technology with fast readout. This enables low dose, video rate X-ray imaging. Fast X-ray imaging will find its applications no
ISSCC 2016
Session 16
Other
A Flexible EEG Acquisition and Biomarker Extraction System Based on Thin-Film Electronics
Sigurd Wagner, James C. Sturm, Naveen Verma Princeton University, Princeton, NJ EEG is an important modality for many medical purposes. However, the lowamplitude of signals (10-to-100μV) and large number of channels (~20
ISSCC 2016
Session 16
Other
A 16×16 pixels SPAD-based 128-Mb/s Quantum Random Number Generator with -74dB Light Rejection Ratio and -6.7ppm/°C Bias Sensitivity on Temperature
Alessio Meneghetti2, Hesong Xu1, Daniele Perenzoni1, Guglielmo Morgari3, David Stoppa1 Fondazione Bruno Kessler, Trento, Italy, 2University of Trento, Povo, Italy, 3Telsy, Torino, Italy 1 A robust true random number gene
ISSCC 2016
Session 16
Other
A Keccak-Based Wireless Authentication Tag with per-Query Key Update and Power-Glitch Attack Countermeasures
While small lowcost tagging solutions for supply-chain management exist, security in the face of fault-injection [1] and side-channel attacks [2] remains a concern. Power glitch attacks [3] in particular attempt to leak
ISSCC 2016
Session 16
Other
A Nanogap Transducer Array on 32nm CMOS for Electrochemical DNA Sequencing source follower’s drop. Thick gate devices also relax ESD constraints for the postprocessing steps required to construct the sensors.
Noureddine Tayebi1, Grace M. Credo1, David J. Liu1, Handong Li1, Kai Wu1, Xing Su1, Madoo Varma1, Oguz H. Elibol1 Architecturally each array is arranged like an imager and the chip contains 8 arrays of 32×32 pixels for a
ISSCC 2016
Session 15
Data Converters
A 22.3b 1kHz 12.7mW Switched-Capacitor ΔΣ Modulator with Stacked Split-Steering Amplifiers
West Silicon EURL, Hottot les Bagues, France 1 2 Efforts to improve the resolution and power-efficiency of ADCs continue unabated, as is well documented in [2]. Although the number of new switchedcapacitor (SC) ADC publi
ISSCC 2016
Session 15
Data Converters
A 1.65mW 0.16mm2 Dynamic Zoom-ADC with 107.5dB DR in 20kHz BW
stereo channels to achieve effective acoustic noise and echo cancellation, thus demanding ADCs with low power and minimal die area. Zoom-ADCs should be well suited for such applications, since they combine compact and en
ISSCC 2016
Session 15
Data Converters
A 160MHz-BW 72dB-DR 40mW Continuous-Time ΔΣ Modulator in 16nm CMOS with Analog ISIReduction Technique
baseband ADC of an LTE-A receiver. To boost user throughput and increase network capacity, CT-DSMs will need to increase signal bandwidth (BW) while maintaining sufficient dynamic range (DR) and good power efficiency. Fo
ISSCC 2016
Session 15
Data Converters
A 930mW 69dB-DR 465MHz-BW CT 1-2 MASH ADC in 28nm CMOS
Cambridge, MA 1 2 The width of RF bands commonly used for cellular telecommunications has grown from 35-to-75MHz for 2G/3G/4G platforms to 100-to-200MHz for today’s LTE, and the desire for relaxed image-rejection filteri
ISSCC 2016
Session 15
Data Converters
A 280µW 24kHz-BW 98.5dB-SNDR Chopped Single-Bit CT ΔΣM Achieving <10Hz 1/f Noise Corner Without Chopping Artifacts
IIT Madras, Chennai, India Many industrial applications require high-resolution ADCs whose low-frequency performance is important. CTDSMs are attractive due to their implicit antialiasing and resistive inputs. However, t
ISSCC 2016
Session 15
Data Converters
A 1V 77dB-DR 72dB-SNDR 10MHz-BW 2-1 MASH CT ΔΣM
DEE, FCT, Universidade NOVA de Lisboa, Caparica, Portugal, CTS-UNINOVA, Caparica, Portugal 1 2 ΔΣM performance can be improved by using MASH or SMASH structures to obtain higher-order noise shaping [1]. They have better
ISSCC 2016
Session 15
Data Converters
A 2.2GHz Continuous-Time ΔΣ ADC with -102dBc THD and 25MHz BW
Shagun Bajoria1, Jan Niehof1, Robert Rutten1, Bert Oude-Essink2, Franco Fritschij2, Jagdip Singh2, Gerard Lassche2 NXP Semiconductors, Eindhoven, The Netherlands, Catena Microelectronics, Delft, The Netherlands 1 2 The t
ISSCC 2016
Session 15
Data Converters
A 24.7mW 45MHz-BW 75.3dB-SNDR SARAssisted CT ΔΣ Modulator with 2nd-Order Noise Coupling in 65nm CMOS
Technology advancement has recently made it attractive to replace the flash quantizer (QTZ) in a multibit ΔΣ modulator by an asynchronous successiveapproximation-register (ASAR) QTZ to improve the overall power efficienc
ISSCC 2016
Session 14
Other
A 4Gpixel/s 8/10b H.265/HEVC Video Decoder Chip for 8K Ultra HD Applications
Jiayi Zhu, Yijin Zhao, Jinjia Zhou, Shuping Zhang, Shinji Kimura, Takeshi Yoshimura, Satoshi Goto Waseda University, Kitakyushu, Japan 8K Ultra HD is being promoted as the next-generation digital video format. From a com
ISSCC 2016
Session 14
AI / ML
A 1.42TOPS/W Deep Convolutional Neural Network Recognition Processor for Intelligent IoE Systems
Internet-ofEverything (IoE) devices to data center servers for intelligent recognition processes is impractical for energy reasons, requiring in-situ processing of such data. However, algorithms accelerated by previous r
ISSCC 2016
Session 14
AI / ML
Eyeriss: An Energy-Efficient Reconfigurable Accelerator for Deep Convolutional Neural Networks
Nvidia, Westford, MA 1 2 Deep learning using convolutional neural networks (CNN) gives state-of-the-art accuracy on many computer vision tasks (e.g. object detection, recognition, segmentation). Convolutions account for
ISSCC 2016
Session 14
Other
A 21.5M-Query-Vectors/s 3.37nJ/Vector Reconfigurable k-Nearest-Neighbor Accelerator with Adaptive Precision in 14nm Tri-Gate CMOS
Sudhir K. Satpathy, Steven K. Hsu, Amit Agarwal, Ram K. Krishnamurthy Intel, Hillsboro, OR Energy-efficient k-nearest-neighbor (kNN) computations are key building blocks for computer vision, classification, and machine-l
ISSCC 2016
Session 14
Other
A 0.55V 1.1mW Artificial-Intelligence Processor with PVT Compensation for Micro Robots
applications, such as unmanned delivery services. The robots, shown in Fig. 14.3.1, have enhanced controllers that realize AI functions, such as perception (information extraction) and cognition (decision making). Histor
ISSCC 2016
Session 14
AI / ML
A 502GOPS and 0.984mW Dual-Mode ADAS SoC with RNN-FIS Engine for Intention Prediction in Automotive Black-Box System
forward-collision warning, advanced emergency braking, adaptive cruise control, and lane-keeping assistance. Recently, automotive black boxes are installed in cars for tracking accidents or theft. In this paper, a dual-m
ISSCC 2016
Session 14
Other
A 126.1mW Real-Time Natural UI/UX Processor with Embedded Deep-Learning Core for Low-Power Smart Glasses
substitute due to their ease of use and suitability for advanced applications, such as gaming and augmented reality (AR) [1-2]. Most current HMD systems suffer from: 1) a lack of rich user interfaces, 2) short battery li
ISSCC 2016
Session 13
Wireless
A 0.22mm2 CMOS Resistive Charge-Based Direct-Launch Digital Transmitter with -159dBc/Hz Out-of-Band Noise
communication systems is dominated by the tradeoff between cost and performance. While the former claims ever-smaller footprints and bill of materials (BOM), the latter comprises a stringent set of requirements regarding
ISSCC 2016
Session 13
Wireless
A 42Gb/s 60GHz CMOS Transceiver for IEEE 802.11ay
Shinji Sato, Satoshi Kondo, Tomohiro Ueno, Teerachot Siriburanon, Shoutarou Maki, Bangan Liu, Yun Wang, Noriaki Nagashima, Masaya Miyahara, Kenichi Okada, Akira Matsuzawa Tokyo Institute of Technology, Tokyo, Japan It is
ISSCC 2016
Session 13
Wireless
A 4-Antenna-Path Beamforming Transceiver for 60GHz Multi-Gb/s Communication in 28nm CMOS
Kristof Vaesen1, Davide Guermandi1, Vito Giannini1,3, Steven Brebels1, Fortunato Frazzica1, André Bourdoux1, Charlotte Soens1, Wim Van Thillo1, Piet Wambacq1,2 imec, Heverlee, Belgium, Vrije Universiteit Brussel, Brussel
ISSCC 2016
Session 13
Wireless
A Microwave Injection-Locking Outphasing Modulator with 30dB Dynamic Range and 22% System Efficiency in 45nm CMOS SOI
University of California, Santa Barbara, CA 1 2 High-capacity microwave systems demand high-efficiency transmit architectures that support complex waveforms with high peak-to-average-power-ratio (PAPR) modulation. The ou
ISSCC 2016
Session 13
Wireless
A 56Gb/s W-Band CMOS Wireless Transceiver
Noriaki Nagashima1, Jun Emmei1, Masato Dome1, Hisashi Kato1, Jian Pang1, Yoichi Kawano2, Toshihide Suzuki2, Taisuke Iwai2, Yuuki Seo1, Kimsrun Lim1, Shinji Sato1, Li Ning1, Kengo Nakata1, Kenichi Okada1, Akira Matsuzawa1
ISSCC 2016
Session 13
Wireless
A Ku-Band 260mW FMCW Synthetic Aperture Radar TRX with 1.48GHz BW in 65nm CMOS for Micro-UAVs
capabilities to acquire imagery during night and inclement weather is indispensable for remote sensing, traffic mapping, etc. Recent unmanned aerial vehicles (UAVs) have been miniaturized to <1m3, providing an inexpensiv
ISSCC 2016
Session 13
Wireless
A 940MHz-Bandwidth 28.8µs-Period 8.9GHz Chirp Frequency Synthesizer PLL in 65nm CMOS for X-Band FMCW Radar Applications
1.3 shows the circuit implementation of the low-power PI used in the phase DAC. The PI stage consists of two complementary parts, each interpolating between the rising or falling edges of the two input clocks, respective
ISSCC 2016
Session 12
Power Management
A Flying-Domain DC-DC Converter Powering a Cortex-M0 Processor with 90.8% Efficiency
Modern SoC designs employed in battery-life-constrained mobile applications feature multiple power domains to dynamically scale power-performance tradeoffs in response to application demands. Since each power domain requ
ISSCC 2016
Session 12
Power Management
Synchronized Floating Current Mirror for Maximum LED Utilization in Multiple-String Linear LED Drivers
High-voltage linear drivers for multiple-string LEDs have been widely used in general lighting due to their low cost, simplicity, low electromagnetic interference (EMI), and high reliability. However, in conventional mul
ISSCC 2016
Session 12
Power Management
A 96%-Efficiency and 0.5%-Current-CrossRegulation Single-Inductor Multiple FloatingOutput LED Driver with 24b Color Resolution
Nan Hua University, Hsinchu, Taiwan 1 The calibration process of the ACC technique is described by the flow chart in Fig. 12.7.3. When ACC detects that LEDs are all on, the output voltage is sensed and defined as VOt. Le
ISSCC 2016
Session 12
Power Management
Capacitor-Current-Sensor Calibration Technique and Application in a 4-Phase Buck Converter with Load-Transient Optimization
causes a large output voltage undershoot ΔVUS and long settling time ts if the transient responses are slow [1]. Since the output capacitor current ICo instantly reflects ΔIload, transient response optimization for minim
ISSCC 2016
Session 12
Power Management
A 2MHz 12-to-100V 90%-Efficiency SelfBalancing ZVS Three-Level DC-DC Regulator with Constant-Frequency AOT V2 Control and 5ns ZVS Turn-On Delay
Wide input rails (12V to 100V) are common in today’s automotive and industrial systems. Miniaturized DC-DC voltage regulators (VRs), which can provide a lowvoltage regulated output from a wide input range and deliver a f
ISSCC 2016
Session 12
Power Management
A 10mW Fully Integrated 2-to-13V-Input BuckBoost SC Converter with 81.5% Peak Efficiency
In recent years, significant progress has been made on switched-capacitor DC-DC converters as they enable fully integrated on-chip power management. New converter topologies overcame the fixed input-to-output voltage lim
ISSCC 2016
Session 12
Power Management
A 2-Output Step-Up/Step-Down SwitchedCapacitor DC-DC Converter with 95.8% Peak Efficiency and 0.85-to-3.6V Input Voltage Range
Switched-capacitor (SC) DC-DC converters have gained attention based on their ability to offer a low-cost high-efficiency power conversion, and allow a thin and compact module packaging [1]. However, the SC DC-DC convert
ISSCC 2016
Session 12
Power Management
A 94.6%-Efficiency Fully Integrated SwitchedCapacitor DC-DC Converter in Baseline 40nm CMOS Using Scalable Parasitic Charge Redistribution
In recent years, there has been an ever-increasing interest in monolithic power supplies. Integrating the power supply with the application has many direct benefits, including a reduction of the bill of materials and red
ISSCC 2016
Session 12
Power Management
A Rational-Conversion-Ratio Switched-Capacitor DC-DC Converter Using Negative-Output Feedback
Switched-capacitor (SC) DC-DC converters have several advantages over inductive DC-DC converters in that they are easily integrated on-chip and can scale to desired power levels, rendering themselves promising for integr